This is an early access version, the complete PDF, HTML, and XML versions will be available soon.
Open AccessArticle
Enhancing the Resistive Switching Properties of Transparent HfO2-Based Memristor Devices for Reliable Gasistor Applications
by
Taegi Kim
Taegi Kim 1,†,
Doowon Lee
Doowon Lee 2,†,
Myoungsu Chae
Myoungsu Chae 3,†,
Kyeong-Heon Kim
Kyeong-Heon Kim 4 and
Hee-Dong Kim
Hee-Dong Kim 1,*
1
Department of Semiconductor Systems Engineering, Convergence Engineering for Intelligent Drone, Institute of Semiconductor and System IC, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea
2
Division of Electrical, Electronic and Control Engineering, Kongju National University, Cheonan 31080, Republic of Korea
3
Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro City, Tokyo 153-8505, Japan
4
Department of Convergence Electronic Engineering, Gyeongsang National University, Jinju-si 52725, Republic of Korea
*
Author to whom correspondence should be addressed.
†
These authors contributed equally to this work.
Sensors 2024, 24(19), 6382; https://doi.org/10.3390/s24196382 (registering DOI)
Submission received: 19 August 2024
/
Revised: 13 September 2024
/
Accepted: 30 September 2024
/
Published: 1 October 2024
Abstract
We present a transparent memristor with a rough-surface (RS) bottom electrode (BE) with enhanced performance and reliability for a gasistor, which is a gas sensor plus a memristor, and its application in this paper. The transparent memristor, with an RS BE, exhibited low forming voltages (0.8 V) and a stable resistive switching behavior, with high endurance and an on/off ratio of about 125. This improvement is due to the better control of the electric field distribution and the oxygen vacancy concentration when applying the RS BE to transparent memristors. Maintaining the stability of the conducting filament in an ambient air environment for extended periods of time is crucial for the application of memristors as gasistors. The memristor with an RS BE demonstrates an ability to sustain a stable-current state for approximately 104 s. As a result, it is shown that the proposed transparent memristor with an RS BE can significantly enhance the device’s reliability for gasistor applications.
Share and Cite
MDPI and ACS Style
Kim, T.; Lee, D.; Chae, M.; Kim, K.-H.; Kim, H.-D.
Enhancing the Resistive Switching Properties of Transparent HfO2-Based Memristor Devices for Reliable Gasistor Applications. Sensors 2024, 24, 6382.
https://doi.org/10.3390/s24196382
AMA Style
Kim T, Lee D, Chae M, Kim K-H, Kim H-D.
Enhancing the Resistive Switching Properties of Transparent HfO2-Based Memristor Devices for Reliable Gasistor Applications. Sensors. 2024; 24(19):6382.
https://doi.org/10.3390/s24196382
Chicago/Turabian Style
Kim, Taegi, Doowon Lee, Myoungsu Chae, Kyeong-Heon Kim, and Hee-Dong Kim.
2024. "Enhancing the Resistive Switching Properties of Transparent HfO2-Based Memristor Devices for Reliable Gasistor Applications" Sensors 24, no. 19: 6382.
https://doi.org/10.3390/s24196382
Note that from the first issue of 2016, this journal uses article numbers instead of page numbers. See further details
here.
Article Metrics
Article Access Statistics
For more information on the journal statistics, click
here.
Multiple requests from the same IP address are counted as one view.