Improved Output Power of GaN-based VCSEL with Band-Engineered Electron Blocking Layer
Abstract
:1. Introduction
2. Device Structure and Simulation Parameters
3. Results and Discussions
4. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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Sample Name | GVCSEL1 | GVCSEL2 | GVCSEL3 |
---|---|---|---|
p-Al0.21Ga0.79N | 22 nm | 20 nm | 10 nm |
p-Al0→0.21Ga1→0.79N | 6 nm | 8 nm | 16 nm |
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Luo, H.; Li, J.; Li, M. Improved Output Power of GaN-based VCSEL with Band-Engineered Electron Blocking Layer. Micromachines 2019, 10, 694. https://doi.org/10.3390/mi10100694
Luo H, Li J, Li M. Improved Output Power of GaN-based VCSEL with Band-Engineered Electron Blocking Layer. Micromachines. 2019; 10(10):694. https://doi.org/10.3390/mi10100694
Chicago/Turabian StyleLuo, Huiwen, Junze Li, and Mo Li. 2019. "Improved Output Power of GaN-based VCSEL with Band-Engineered Electron Blocking Layer" Micromachines 10, no. 10: 694. https://doi.org/10.3390/mi10100694