Jia, H.; Tong, Y.; Li, T.; Zhu, S.; Liang, Y.; Wang, X.; Zeng, T.; Yang, Y.
An Improved 4H-SiC MESFET with a Partially Low Doped Channel. Micromachines 2019, 10, 555.
https://doi.org/10.3390/mi10090555
AMA Style
Jia H, Tong Y, Li T, Zhu S, Liang Y, Wang X, Zeng T, Yang Y.
An Improved 4H-SiC MESFET with a Partially Low Doped Channel. Micromachines. 2019; 10(9):555.
https://doi.org/10.3390/mi10090555
Chicago/Turabian Style
Jia, Hujun, Yibo Tong, Tao Li, Shunwei Zhu, Yuan Liang, Xingyu Wang, Tonghui Zeng, and Yintang Yang.
2019. "An Improved 4H-SiC MESFET with a Partially Low Doped Channel" Micromachines 10, no. 9: 555.
https://doi.org/10.3390/mi10090555
APA Style
Jia, H., Tong, Y., Li, T., Zhu, S., Liang, Y., Wang, X., Zeng, T., & Yang, Y.
(2019). An Improved 4H-SiC MESFET with a Partially Low Doped Channel. Micromachines, 10(9), 555.
https://doi.org/10.3390/mi10090555