Order Article Reprints
Journal: Micromachines, 2020
Volume: 11
Number: 222
Article:
Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications
Authors:
by
Y. C. Lin, S. H. Chen, P. H. Lee, K. H. Lai, T. J. Huang, Edward Y. Chang and Heng-Tung Hsu
Link:
https://www.mdpi.com/2072-666X/11/2/222
MDPI offers high quality article reprints with convenient shipping to destinations worldwide. Each reprint features a 270 gsm bright white cover
and 105 gsm premium white paper, bound with two stitches for durability and printed in full color. The cover design is customized to your article
and designed to be complimentary to the journal.
