Article Versions Notes

Du Y, Wei W, Xu B, Wang G, Li B, Miao Y, Zhao X, Kong Z, Lin H, Yu J, et al. Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser. Micromachines. 2022; 13(10):1579. https://doi.org/10.3390/mi13101579

Du, Yong, Wenqi Wei, Buqing Xu, Guilei Wang, Ben Li, Yuanhao Miao, Xuewei Zhao, Zhenzhen Kong, Hongxiao Lin, Jiahan Yu, and et al. 2022. "Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser" Micromachines 13, no. 10: 1579. https://doi.org/10.3390/mi13101579

Du, Y., Wei, W., Xu, B., Wang, G., Li, B., Miao, Y., Zhao, X., Kong, Z., Lin, H., Yu, J., Su, J., Dong, Y., Wang, W., Ye, T., Zhang, J., & Radamson, H. H. (2022). Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser. Micromachines, 13(10), 1579. https://doi.org/10.3390/mi13101579