A Novel AlGaN/GaN Transient Voltage Suppression Diode with Bidirectional Clamp Capability

He, Zhiyuan; Shi, Yijun; Huang, Yun; Chen, Yiqiang; Wang, Hongyue; Wang, Lei; Lu, Guoguang; Xin, Yajie

doi:10.3390/mi13020299

Open AccessArticle

A Novel AlGaN/GaN Transient Voltage Suppression Diode with Bidirectional Clamp Capability

by

Zhiyuan He

,

Yijun Shi

^*

,

Yun Huang

,

Yiqiang Chen

^*

,

Hongyue Wang

,

Lei Wang

,

Guoguang Lu

and

Yajie Xin

The Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic, Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China

^*

Authors to whom correspondence should be addressed.

Micromachines 2022, 13(2), 299; https://doi.org/10.3390/mi13020299

Submission received: 13 January 2022 / Revised: 11 February 2022 / Accepted: 11 February 2022 / Published: 14 February 2022

(This article belongs to the Special Issue Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume III)

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Abstract

This work proposes a novel AlGaN/GaN transient voltage suppression (TVS) diode (B-TVS-D) with bidirectional clamp capability, which consists of a small-size AlGaN/GaN monolithic bidirectional switch, two 2DEG-based current-limiting resistors (R_1A/R_1C, in parallel connection between the gate electrodes and the neighboring ohmic-contact electrodes (anode/cathode)), and a 2DEG-based proportional amplification resistor (R₂, in parallel connection between two gate electrodes). It is demonstrated that the proposed B-TVS-D possesses a symmetrical triggering voltage (V_trig) and a high secondary breakdown current (I_s, over 8 A, corresponding to 12 kV human body model failure voltage) in different directional electrostatic discharge (ESD) events. The proposed diode can effectively enhance the electrostatic discharge robustness for the GaN-based power system. It is also verified that R_1A/R_1C and R₂ have an important impact on V_trig of the proposed B-TVS-D. Both the decrease in R₂ and increase in R_1A/R_1C can lead to the decrease of V_trig. In addition, the proposed B-TVS-D can be fabricated on the conventional p-GaN HEMT platform, making the ESD design of the GaN-based power system more convenient.

Keywords: transient voltage suppression; TVS diode; GaN HEMT; Transmission Line Pulsing

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MDPI and ACS Style

He, Z.; Shi, Y.; Huang, Y.; Chen, Y.; Wang, H.; Wang, L.; Lu, G.; Xin, Y. A Novel AlGaN/GaN Transient Voltage Suppression Diode with Bidirectional Clamp Capability. Micromachines 2022, 13, 299. https://doi.org/10.3390/mi13020299

AMA Style

He Z, Shi Y, Huang Y, Chen Y, Wang H, Wang L, Lu G, Xin Y. A Novel AlGaN/GaN Transient Voltage Suppression Diode with Bidirectional Clamp Capability. Micromachines. 2022; 13(2):299. https://doi.org/10.3390/mi13020299

Chicago/Turabian Style

He, Zhiyuan, Yijun Shi, Yun Huang, Yiqiang Chen, Hongyue Wang, Lei Wang, Guoguang Lu, and Yajie Xin. 2022. "A Novel AlGaN/GaN Transient Voltage Suppression Diode with Bidirectional Clamp Capability" Micromachines 13, no. 2: 299. https://doi.org/10.3390/mi13020299

APA Style

He, Z., Shi, Y., Huang, Y., Chen, Y., Wang, H., Wang, L., Lu, G., & Xin, Y. (2022). A Novel AlGaN/GaN Transient Voltage Suppression Diode with Bidirectional Clamp Capability. Micromachines, 13(2), 299. https://doi.org/10.3390/mi13020299

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A Novel AlGaN/GaN Transient Voltage Suppression Diode with Bidirectional Clamp Capability

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