Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor
Abstract
:1. Introduction
2. Simulation Results
3. Device Structure
4. Experimental Results and Discussion
5. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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LSD | LGD | LGS | FP1~Gate | FP1~Channel | FP2~Gate | FP2~Channel | FP3~Gate | FP3~Channel | |
---|---|---|---|---|---|---|---|---|---|
Device with 2 FP layers | 21 | 17.5 | 1.5 | 3 | 0.5 | 7 | 1.2 | × | × |
Device with 3 FP layers | 2 | 0.3 | 4.75 | 0.7 | 10.5 | 1.7 |
HTGB | VTH | Ron | IGS@VGS = 5 V | |
---|---|---|---|---|
Temperature = 150 °C VGS = 5 V Time = 168 h | Device with 2 FP layers | 15% | 7% | 15% |
Device with 3 FP layers | 14% | 4% | 6% | |
HTRB | VTH | Ron | IGS@VGS = 5 V | |
Temperature = 150 °C VDS = 600 V, VGS = 0 V Time = 168 h | Device with 2 FP layers | <4% | <4% | <4% |
Device with 3 FP layers | <4% | <4% | <4% |
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Liu, C.-H.; Huang, C.-R.; Wang, H.-C.; Kang, Y.-J.; Chiu, H.-C.; Kao, H.-L.; Chu, K.-H.; Kuo, H.-C.; Chen, C.-T.; Chang, K.-J. Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor. Micromachines 2022, 13, 1554. https://doi.org/10.3390/mi13091554
Liu C-H, Huang C-R, Wang H-C, Kang Y-J, Chiu H-C, Kao H-L, Chu K-H, Kuo H-C, Chen C-T, Chang K-J. Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor. Micromachines. 2022; 13(9):1554. https://doi.org/10.3390/mi13091554
Chicago/Turabian StyleLiu, Chia-Hao, Chong-Rong Huang, Hsiang-Chun Wang, Yi-Jie Kang, Hsien-Chin Chiu, Hsuan-Ling Kao, Kuo-Hsiung Chu, Hao-Chung Kuo, Chih-Tien Chen, and Kuo-Jen Chang. 2022. "Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor" Micromachines 13, no. 9: 1554. https://doi.org/10.3390/mi13091554