A Derating-Sensitive Tantalum Polymer Capacitor’s Failure Rate within a DC-DC eGaN-FET-Based PoL Converter Workbench Study
Abstract
:1. Introduction
- Voltage derating
- Temperature
- ESR (equivalent series resistance)
2. Materials and Methods
3. Results
3.1. Experimental Workbench SET-UP, Key Measurements, and the Mode of Investigation
- The intensity of the current through the converter’s inductance L = 3 μH (a SMD power coil constructed with flat wire windings), which was collected by a current probe. The current probe used in the experiment had a 10-mV output voltage, corresponding to 4 A as measured.
- The voltage measured in the so-called “switching point” (at the junction between high FET and synchro FET).
3.2. Reliability Calculation
- τi = 365 days × duty cycle = 365 × 0.13
- πT = 0.9 derived from Figure 11 @ 25 °C
- ni = 365 and (πn)i = (ni0.76) × 1.7
- τon = 1 and τoff = 0
- Σ(πn)i = ni and Σ(πT)i = πT
- ΔTi = capacitor’s surface temperature—ambient temperature
- λpolimer capA = 0.4 × {[(0.9 × 54.75)/(1 + 0)] + 1.4 × (10−3) × [(1.7 × 3650.6) × (36 − 25)0.68]} × (10−9)/h = 7215.425 FIT = 7.215425 F/106 h
- λpolimer capB[derated] = 0.4 × {[(0.9 × 54.75)/(1 + 0)] + 1.4 × (10−3) × [(1.7 × 3650.6) × (31 − 25)0.68]} × (10−9)/h = 6821.755 FIT = 6.821755 F/106 h
- MTBFpolimer capA = 138,591 h or 15.821 yr
- MTBFpolimer capB[derated] = 146,589 h or 16.734 yr
4. Discussion
Funding
Data Availability Statement
Acknowledgments
Conflicts of Interest
References
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Rated Voltage | Derated Voltage | ||
---|---|---|---|
−55 °C to 05 °C | −55 °C to 125 °C | −55 °C to 105 °C | −55 °C to 125 °C |
2.5 V | 1.7 V | 2.3 V | 1.5 V |
4 V | 2.7 V | 3.6 V | 2.4 V |
6.3 V | 4.2 V | 5.7 V | 3.8 V |
10 V | 6.7 V | 9 V | 6 V |
16 V | 10.7 V | 12.8 V | 8.6 V |
20 V | 13.4 V | 16 V | 10.7 V |
25 V | 16.8 V | 20 V | 13.4 V |
35 V | 23.5 V | 28 V | 18.8 V |
Application Voltage | Mission Profile Temperature (up to 105 °C) | Mission Profile Temperature (up to 125 °C) |
---|---|---|
<1 V | 2.5 V | 2.5 V |
3.3 V | 4 V | 6.3 V |
5 V | 6.3 V | 10 V |
12 V | Minimum 35 V | Minimum 35 V |
Parameter | Value |
---|---|
Load resistor | Rload = 0.1 Ω |
Load current | Iout = 12 A |
Input current | Iin = 1.2 A |
Input voltage | Vin = 12 V |
Output voltage | Vout =1.2V |
Switching frequency | fsw = 300 kHz |
Inductor | L = 3 μH |
Ambient temperature | ~25 °C |
Duty cycle | ~13% |
Output Ctantalum-polyA | 220 μF/4 V |
Output Ctantalum-polyB [derated] | 220 μF/6.3 V |
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Butnicu, D. A Derating-Sensitive Tantalum Polymer Capacitor’s Failure Rate within a DC-DC eGaN-FET-Based PoL Converter Workbench Study. Micromachines 2023, 14, 221. https://doi.org/10.3390/mi14010221
Butnicu D. A Derating-Sensitive Tantalum Polymer Capacitor’s Failure Rate within a DC-DC eGaN-FET-Based PoL Converter Workbench Study. Micromachines. 2023; 14(1):221. https://doi.org/10.3390/mi14010221
Chicago/Turabian StyleButnicu, Dan. 2023. "A Derating-Sensitive Tantalum Polymer Capacitor’s Failure Rate within a DC-DC eGaN-FET-Based PoL Converter Workbench Study" Micromachines 14, no. 1: 221. https://doi.org/10.3390/mi14010221
APA StyleButnicu, D. (2023). A Derating-Sensitive Tantalum Polymer Capacitor’s Failure Rate within a DC-DC eGaN-FET-Based PoL Converter Workbench Study. Micromachines, 14(1), 221. https://doi.org/10.3390/mi14010221