Latest Advancements in Next-Generation Semiconductors: Materials and Devices for Wide Bandgap and 2D Semiconductors
1. Device Architecture and Design
2. Material Science and Fabrication Techniques
3. Energy Efficiency and Power Management
4. Optoelectronics and Light-Based Technologies
Author Contributions
Conflicts of Interest
List of Contributions
- Butnicu, D. A Derating-Sensitive Tantalum Polymer Capacitor’s Failure Rate within a DC-DC eGaN-FET-Based PoL Converter Workbench Study. Micromachines 2023, 14, 221. https://doi.org/10.3390/mi14010221.
- Chen, W.; Duan, Z.; Zhang, H.; Han, Z.; Wang, Z. A FIN-LDMOS with Bulk Electron Accumulation Effect. Micromachines 2023, 14, 1225. https://doi.org/10.3390/mi14061225.
- Choi, J.-H.; Kang, W.-S.; Kim, D.; Kim, J.-H.; Lee, J.-H.; Kim, K.-Y.; Min, B.-G.; Kang, D.M.; Kim, H.-S. Enhanced Operational Characteristics Attained by Applying HfO2 as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study. Micromachines 2023, 14, 1101. https://doi.org/10.3390/mi14061101.
- Han, Y.; Lee, D.H.; Cho, E.-S.; Kwon, S.J.; Yoo, H. Argon and Oxygen Gas Flow Rate Dependency of Sputtering-Based Indium-Gallium-Zinc Oxide Thin-Film Transistors. Micromachines 2023, 14, 1394. https://doi.org/10.3390/mi14071394.
- Kudryashov, S.; Danilov, P.; Smirnov, N.; Kuzmin, E.; Rupasov, A.; Khmelnitsky, R.; Krasin, G.; Mushkarina, I.; Gorevoy, A. Photoluminescent Microbit Inscripion Inside Dielectric Crystals by Ultrashort Laser Pulses for Archival Applications. Micromachines 2023, 14, 1300. https://doi.org/10.3390/mi14071300.
- Liu, Z.; Ren, K.; Dai, G.; Zhang, J. A Review on Micro-LED Display Integrating Metasurface Structures. Micromachines 2023, 14, 1354. https://doi.org/10.3390/mi14071354.
- Ma, B.; Chen, S.; Wang, S.; Qian, L.; Han, Z.; Huang, W.; Fu, X.; Liu, H. A False Trigger-Strengthened and Area-Saving Power-Rail Clamp Circuit with High ESD Performance. Micromachines 2023, 14, 1172. https://doi.org/10.3390/mi14061172.
- Xie, H.; Liu, H. Single-Particle Irradiation Effect and Anti-Irradiation Optimization of a JLTFET with Lightly Doped Source. Micromachines 2023, 14, 1413. https://doi.org/10.3390/mi14071413.
- Zhang, M.; Chen, Y.; Guo, S.; Lu, H.; Zhu, Q.; Mi, M.; Wu, M.; Hou, B.; Yang, L.; Ma, X.; et al. Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications. Micromachines 2023, 14, 1513. https://doi.org/10.3390/mi14081513.
- Zhang, Z.; Zhao, D.; He, H.; Tang, L.; He, Q. Analysis of Noise-Detection Characteristics of Electric Field Coupling in Quartz Flexible Accelerometer. Micromachines 2023, 14, 535. https://doi.org/10.3390/mi14030535.
References
- Markov, I.L. Limits on Fundamental Limits to Computation. Nature 2014, 512, 147–154. [Google Scholar] [CrossRef] [PubMed]
- Kelley, T.W.; Baude, P.F.; Gerlach, C.; Ender, D.E.; Muyres, D.; Haase, M.A.; Vogel, D.E.; Theiss, S.D. Recent Progress in Organic Electronics: Materials, Devices, and Processes. Chem. Mater. 2004, 16, 4413–4422. [Google Scholar] [CrossRef]
- Huang, J.-K.; Wan, Y.; Shi, J.; Zhang, J.; Wang, Z.; Wang, W.; Yang, N.; Liu, Y.; Lin, C.-H.; Guan, X.; et al. High-κ Perovskite Membranes as Insulators for Two-Dimensional Transistors. Nature 2022, 605, 262–267. [Google Scholar] [CrossRef] [PubMed]
- Huang, J.-K.; Wan, Y.; Shi, J.; Zhang, J.; Wang, Z.; Yang, Z.-L.; Huang, B.-C.; Chiu, Y.-P.; Wang, W.; Yang, N.; et al. Crystalline Complex Oxide Membrane: Sub-1 Nm CET Dielectrics for 2D Transistors. In Proceedings of the 2022 International Electron Devices Meeting (IEDM), San Francisco, CA, USA , 3–7 December 2022; IEEE: Piscataway, NJ, USA, 2022; pp. 7.6.1–7.6.4. [Google Scholar]
- Wang, Z.; Feng, M.; Serrano, S.; Gilbert, W.; Leon, R.C.C.; Tanttu, T.; Mai, P.; Liang, D.; Huang, J.Y.; Su, Y.; et al. Jellybean Quantum Dots in Silicon for Qubit Coupling and On-Chip Quantum Chemistry. Adv. Mater. 2023, 35, 2208557. [Google Scholar] [CrossRef]
- Wang, Z.; Cao, J.; Wang, F.; Chen, W.; Zhang, B.; Guo, S.; Yao, Y. Proposal of a Novel Enhancement Type AlGaN/GaN HEMT Using Recess-Free Field Coupled Gate. Superlattices Microstruct. 2018, 122, 343–348. [Google Scholar] [CrossRef]
- Wang, Z.; Wang, F.; Guo, S.; Wang, Z. Simulation Study of High-reverse Blocking AlGaN/GaN Power Rectifier with an Integrated Lateral Composite Buffer Diode. Micro Nano Lett. 2017, 12, 660–663. [Google Scholar] [CrossRef]
- Wang, F.; Chen, W.; Wang, Z.; Sun, R.; Wei, J.; Li, X.; Shi, Y.; Jin, X.; Xu, X.; Chen, N.; et al. Simulation Design of Uniform Low Turn-on Voltage and High Reverse Blocking AlGaN/GaN Power Field Effect Rectifier with Trench Heterojunction Anode. Superlattices Microstruct. 2017, 105, 132–138. [Google Scholar] [CrossRef]
- Wang, Z.; Zhang, Z.; Wang, S.; Chen, C.; Wang, Z.; Yao, Y. Design and Optimization on a Novelhigh-Performance Ultra-Thin Barrier AlGaN/GaN Power HEMT with Local Charge Compensation Trench. Appl. Sci. Switz. 2019, 9, 3054. [Google Scholar] [CrossRef]
- Bergh, A.A.; Dean, P.J. Light-Emitting Diodes. Proc. IEEE 1972, 60, 156–223. [Google Scholar] [CrossRef]
- Chang, M.-H.; Das, D.; Varde, P.V.; Pecht, M. Light Emitting Diodes Reliability Review. Microelectron. Reliab. 2012, 52, 762–782. [Google Scholar] [CrossRef]
- Thejokalyani, N.; Dhoble, S.J. Novel Approaches for Energy Efficient Solid State Lighting by RGB Organic Light Emitting Diodes—A Review. Renew. Sustain. Energy Rev. 2014, 32, 448–467. [Google Scholar] [CrossRef]
- DenBaars, S.P.; Feezell, D.; Kelchner, K.; Pimputkar, S.; Pan, C.-C.; Yen, C.-C.; Tanaka, S.; Zhao, Y.; Pfaff, N.; Farrell, R.; et al. Development of Gallium-Nitride-Based Light-Emitting Diodes (LEDs) and Laser Diodes for Energy-Efficient Lighting and Displays. Acta Mater. 2013, 61, 945–951. [Google Scholar] [CrossRef]
- Wang, Z.; Wang, S.; Zhang, Z.; Wang, C.; Yang, D.; Chen, X.; Wang, Z.; Cao, J.; Yao, Y. A High-Performance Tunable LED-Compatible Current Regulator Using an Integrated Voltage Nanosensor. IEEE Trans. Electron. Devices 2019, 66, 1917–1923. [Google Scholar] [CrossRef]
- Liu, Z.; Ren, K.; Dai, G.; Zhang, J. A Review on Micro-LED Display Integrating Metasurface Structures. Micromachines 2023, 14, 1354. [Google Scholar] [CrossRef] [PubMed]
- Dey, A. Semiconductor Metal Oxide Gas Sensors: A Review. Mater. Sci. Eng. B 2018, 229, 206–217. [Google Scholar] [CrossRef]
- Wang, Z.; Yang, D.; Shi, J.; Yao, Y. Approaching Ultra-Low Turn-on Voltage in GaN Lateral Diode. Semicond. Sci. Technol. 2020, 36, 014003. [Google Scholar] [CrossRef]
- Kudryashov, S.; Danilov, P.; Smirnov, N.; Kuzmin, E.; Rupasov, A.; Khmelnitsky, R.; Krasin, G.; Mushkarina, I.; Gorevoy, A. Photoluminescent Microbit Inscripion Inside Dielectric Crystals by Ultrashort Laser Pulses for Archival Applications. Micromachines 2023, 14, 1300. [Google Scholar] [CrossRef]
- Mishra, U.K.; Parikh, P.; Wu, Y.-F. AlGaN/GaN HEMTs-an Overview of Device Operation and Applications. Proc. IEEE 2002, 90, 1022–1031. [Google Scholar] [CrossRef]
- Rabkowski, J.; Peftitsis, D.; Nee, H. Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated. IEEE Ind. Electron. Mag. 2012, 6, 17–26. [Google Scholar] [CrossRef]
- Sivula, K.; van de Krol, R. Semiconducting Materials for Photoelectrochemical Energy Conversion. Nat. Rev. Mater. 2016, 1, 15010. [Google Scholar] [CrossRef]
- Chaves, A.; Azadani, J.G.; Alsalman, H.; da Costa, D.R.; Frisenda, R.; Chaves, A.J.; Song, S.H.; Kim, Y.D.; He, D.; Zhou, J.; et al. Bandgap Engineering of Two-Dimensional Semiconductor Materials. Npj 2D Mater. Appl. 2020, 4, 1–21. [Google Scholar] [CrossRef]
- Neumaier, D.; Pindl, S.; Lemme, M.C. Integrating Graphene into Semiconductor Fabrication Lines. Nat. Mater. 2019, 18, 525–529. [Google Scholar] [CrossRef] [PubMed]
- Theis, T.N.; Wong, H.-S.P. The End of Moore’s Law: A New Beginning for Information Technology. Comput. Sci. Eng. 2017, 19, 41–50. [Google Scholar] [CrossRef]
- Hoefflinger, B. ITRS: The International Technology Roadmap for Semiconductors. In Chips 2020: A Guide to the Future of Nanoelectronics; Hoefflinger, B., Ed.; The Frontiers Collection; Springer: Berlin/Heidelberg, Germany, 2012; pp. 161–174. ISBN 978-3-642-23096-7. [Google Scholar]
- Chen, W.; Duan, Z.; Zhang, H.; Han, Z.; Wang, Z. A FIN-LDMOS with Bulk Electron Accumulation Effect. Micromachines 2023, 14, 1225. [Google Scholar] [CrossRef]
- Ma, B.; Chen, S.; Wang, S.; Qian, L.; Han, Z.; Huang, W.; Fu, X.; Liu, H. A False Trigger-Strengthened and Area-Saving Power-Rail Clamp Circuit with High ESD Performance. Micromachines 2023, 14, 1172. [Google Scholar] [CrossRef] [PubMed]
- Butnicu, D. A Derating-Sensitive Tantalum Polymer Capacitor’s Failure Rate within a DC-DC eGaN-FET-Based PoL Converter Workbench Study. Micromachines 2023, 14, 221. [Google Scholar] [CrossRef]
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Wang, Z.; Huang, J.-K. Latest Advancements in Next-Generation Semiconductors: Materials and Devices for Wide Bandgap and 2D Semiconductors. Micromachines 2023, 14, 1992. https://doi.org/10.3390/mi14111992
Wang Z, Huang J-K. Latest Advancements in Next-Generation Semiconductors: Materials and Devices for Wide Bandgap and 2D Semiconductors. Micromachines. 2023; 14(11):1992. https://doi.org/10.3390/mi14111992
Chicago/Turabian StyleWang, Zeheng, and Jing-Kai Huang. 2023. "Latest Advancements in Next-Generation Semiconductors: Materials and Devices for Wide Bandgap and 2D Semiconductors" Micromachines 14, no. 11: 1992. https://doi.org/10.3390/mi14111992