Argon and Oxygen Gas Flow Rate Dependency of Sputtering-Based Indium-Gallium-Zinc Oxide Thin-Film Transistors
Abstract
:1. Introduction
2. Materials and Methods
3. Results
4. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
- Nomura, K.; Ohta, H.; Takagi, A.; Kamiya, T.; Hirano, M.; Hosono, H. Room-Temperature Fabrication of Transparent Flexible Thin-Film Transistors Using Amorphous Oxide Semiconductors. Nature 2004, 432, 488–492. [Google Scholar] [CrossRef] [PubMed]
- Li, X.; Geng, D.; Mativenga, M.; Jang, J. High-Speed Dual-Gate a-IGZO TFT-Based Circuits with Top-Gate Offset Structure. IEEE Electron. Device Lett. 2014, 35, 461–463. [Google Scholar] [CrossRef]
- Rahaman, A.; Chen, Y.; Hasan, M.M.; Jang, J. A High Performance Operational Amplifier Using Coplanar Dual Gate A-IGZO TFTs. IEEE J. Electron. Devices Soc. 2019, 7, 655–661. [Google Scholar] [CrossRef]
- Park, Y.; Cho, D.Y.; Kim, R.; Kim, K.H.; Lee, J.W.; Lee, D.H.; Jeong, S.I.; Ahn, N.R.; Lee, W.; Choi, J.B. Defect Engineering for High Performance and Extremely Reliable A-IGZO Thin-Film Transistor in QD-OLED. Adv. Electron. Mater. 2022, 8, 2101273. [Google Scholar] [CrossRef]
- Sodhani, A.; Kandpal, K. Design of Threshold Voltage Insensitive Pixel Driver Circuitry Using A-IGZO TFT for AMOLED Displays. Microelectron. J. 2020, 101, 104819. [Google Scholar] [CrossRef]
- Kim, D.; Kim, Y.; Lee, S.; Kang, M.S.; Kim, D.H.; Lee, H. High Resolution A-IGZO TFT Pixel Circuit for Compensating Threshold Voltage Shifts and OLED Degradations. IEEE J. Electron. Devices Soc. 2017, 5, 372–377. [Google Scholar] [CrossRef]
- Lin, C.-L.; Chang, W.-Y.; Hung, C.-C. Compensating Pixel Circuit Driving AMOLED Display with A-IGZO TFTs. IEEE Electron. Device Lett. 2013, 34, 1166–1168. [Google Scholar] [CrossRef]
- Kim, J.-S.; Byun, J.-W.; Jang, J.-H.; Kim, Y.-D.; Han, K.-L.; Park, J.-S.; Choi, B.-D. A High-Reliability Carry-Free Gate Driver for Flexible Displays Using a-IGZO TFTs. IEEE Trans. Electron. Devices 2018, 65, 3269–3276. [Google Scholar] [CrossRef]
- Lee, G.J.; Kim, J.; Kim, J.-H.; Jeong, S.M.; Jang, J.E.; Jeong, J. High Performance, Transparent a-IGZO TFTs on a Flexible Thin Glass Substrate. Semicond. Sci. Technol. 2014, 29, 35003. [Google Scholar] [CrossRef]
- Kwon, S.M.; Cho, S.W.; Kim, M.; Heo, J.S.; Kim, Y.; Park, S.K. Environment-adaptable Artificial Visual Perception Behaviors Using a Light-adjustable Optoelectronic Neuromorphic Device Array. Adv. Mater. 2019, 31, 1906433. [Google Scholar] [CrossRef]
- Yang, Y.; He, Y.; Nie, S.; Shi, Y.; Wan, Q. Light Stimulated IGZO-Based Electric-Double-Layer Transistors for Photoelectric Neuromorphic Devices. IEEE Electron. Device Lett. 2018, 39, 897–900. [Google Scholar] [CrossRef]
- Jang, Y.; Park, J.; Kang, J.; Lee, S.-Y. Amorphous InGaZnO (a-IGZO) Synaptic Transistor for Neuromorphic Computing. ACS Appl. Electron. Mater. 2022, 4, 1427–1448. [Google Scholar] [CrossRef]
- Yang, D.J.; Whitfield, G.C.; Cho, N.G.; Cho, P.-S.; Kim, I.-D.; Saltsburg, H.M.; Tuller, H.L. Amorphous InGaZnO4 Films: Gas Sensor Response and Stability. Sens. Actuators B Chem. 2012, 171, 1166–1171. [Google Scholar] [CrossRef]
- Chen, P.-L.; Liu, I.-P.; Chen, W.-C.; Niu, J.-S.; Liu, W.-C. Study of a Platinum Nanoparticle (Pt NP)/Amorphous In-Ga-Zn-O (A-IGZO) Thin-Film-Based Ammonia Gas Sensor. Sens. Actuators B Chem. 2020, 322, 128592. [Google Scholar] [CrossRef]
- Zan, H.-W.; Li, C.-H.; Yeh, C.-C.; Dai, M.-Z.; Meng, H.-F.; Tsai, C.-C. Room-Temperature-Operated Sensitive Hybrid Gas Sensor Based on Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors. Appl. Phys. Lett. 2011, 98, 253503. [Google Scholar] [CrossRef] [Green Version]
- Zhang, Y.Y.; Qian, L.X.; Lai, P.T.; Dai, T.J.; Liu, X.Z. Improved Detectivity of Flexible A-InGaZnO UV Photodetector via Surface Fluorine Plasma Treatment. IEEE Electron. Device Lett. 2019, 40, 1646–1649. [Google Scholar] [CrossRef]
- Yamada, N.; Kondo, Y.; Cao, X.; Nakano, Y. Visible-Blind Wide-Dynamic-Range Fast-Response Self-Powered Ultraviolet Photodetector Based on CuI/In-Ga-Zn-O Heterojunction. Appl. Mater. Today 2019, 15, 153–162. [Google Scholar] [CrossRef]
- Huang, C.-Y.; Peng, T.-Y.; Hsieh, W.-T. Realization of a Self-Powered InGaZnO MSM UV Photodetector Using Localized Surface Fluorine Plasma Treatment. ACS Appl. Electron. Mater. 2020, 2, 2976–2983. [Google Scholar] [CrossRef]
- Lee, I.-K.; Lee, K.H.; Lee, S.; Cho, W.-J. Microwave Annealing Effect for Highly Reliable Biosensor: Dual-Gate Ion-Sensitive Field-Effect Transistor Using Amorphous InGaZnO Thin-Film Transistor. ACS Appl. Mater. Interfaces 2014, 6, 22680–22686. [Google Scholar] [CrossRef] [PubMed]
- Son, H.W.; Park, J.H.; Chae, M.-S.; Kim, B.-H.; Kim, T.G. Bilayer Indium Gallium Zinc Oxide Electrolyte-Gated Field-Effect Transistor for Biosensor Platform with High Reliability. Sens. Actuators B Chem. 2020, 312, 127955. [Google Scholar] [CrossRef]
- Bhatt, D.; Kumar, S.; Panda, S. Amorphous IGZO Field Effect Transistor Based Flexible Chemical and Biosensors for Label Free Detection. Flex. Print. Electron. 2020, 5, 14010. [Google Scholar] [CrossRef]
- Seok, M.J.; Choi, M.H.; Mativenga, M.; Geng, D.; Kim, D.Y.; Jang, J. A Full-Swing a-IGZO TFT-Based Inverter with a Top-Gate-Bias-Induced Depletion Load. IEEE Electron. Device Lett. 2011, 32, 1089–1091. [Google Scholar] [CrossRef]
- Cho, I.-T.; Lee, J.-W.; Park, J.-M.; Cheong, W.-S.; Hwang, C.-S.; Kwak, J.-S.; Cho, I.-H.; Kwon, H.-I.; Shin, H.; Park, B.-G. Full-Swing a-IGZO Inverter with a Depletion Load Using Negative Bias Instability under Light Illumination. IEEE Electron. Device Lett. 2012, 33, 1726–1728. [Google Scholar] [CrossRef]
- Kim, J.-S.; Jang, J.-H.; Kim, Y.-D.; Byun, J.-W.; Han, K.; Park, J.-S.; Choi, B.-D. Dynamic Logic Circuits Using A-IGZO TFTs. IEEE Trans. Electron. Devices 2017, 64, 4123–4130. [Google Scholar] [CrossRef]
- Cho, M.H.; Seol, H.; Song, A.; Choi, S.; Song, Y.; Yun, P.S.; Chung, K.-B.; Bae, J.U.; Park, K.-S.; Jeong, J.K. Comparative Study on Performance of IGZO Transistors with Sputtered and Atomic Layer Deposited Channel Layer. IEEE Trans. Electron. Devices 2019, 66, 1783–1788. [Google Scholar] [CrossRef]
- Yao, R.; Zheng, Z.; Xiong, M.; Zhang, X.; Li, X.; Ning, H.; Fang, Z.; Xie, W.; Lu, X.; Peng, J. Low-Temperature Fabrication of Sputtered High-k HfO2 Gate Dielectric for Flexible a-IGZO Thin Film Transistors. Appl. Phys. Lett. 2018, 112, 103503. [Google Scholar] [CrossRef]
- Yao, R.; Zheng, Z.; Fang, Z.; Zhang, H.; Zhang, X.; Ning, H.; Wang, L.; Peng, J.; Xie, W.; Lu, X. High-Performance Flexible Oxide TFTs: Optimization of a-IGZO Film by Modulating the Voltage Waveform of Pulse DC Magnetron Sputtering without Post Treatment. J. Mater. Chem. C Mater. 2018, 6, 2522–2532. [Google Scholar] [CrossRef]
- Choi, H.-W.; Song, K.-W.; Kim, S.-H.; Nguyen, K.T.; Eadi, S.B.; Kwon, H.-M.; Lee, H.-D. Zinc Oxide and Indium-Gallium-Zinc-Oxide Bi-Layer Synaptic Device with Highly Linear Long-Term Potentiation and Depression Characteristics. Sci. Rep. 2022, 12, 1259. [Google Scholar] [CrossRef]
- Hwang, S.; Lee, J.H.; Woo, C.H.; Lee, J.Y.; Cho, H.K. Effect of Annealing Temperature on the Electrical Performances of Solution-Processed InGaZnO Thin Film Transistors. Thin Solid. Film. 2011, 519, 5146–5149. [Google Scholar] [CrossRef]
- Lin, C.-I.; Yen, T.-W.; Lin, H.-C.; Huang, T.-Y.; Lee, Y.-S. Effect of Annealing Ambient on the Characteristics of A-IGZO Thin Film Transistors. In Proceedings of the 4th IEEE International NanoElectronics Conference, Taoyuan, Taiwan, 21–24 June 2011; pp. 1–2. [Google Scholar]
- Peng, C.; Yang, S.; Pan, C.; Li, X.; Zhang, J. Effect of Two-Step Annealing on High Stability of a-IGZO Thin-Film Transistor. IEEE Trans. Electron. Devices 2020, 67, 4262–4268. [Google Scholar] [CrossRef]
- Jeong, S.; Ha, Y.; Moon, J.; Facchetti, A.; Marks, T.J. Role of Gallium Doping in Dramatically Lowering Amorphous-oxide Processing Temperatures for Solution-derived Indium Zinc Oxide Thin-film Transistors. Adv. Mater. 2010, 22, 1346–1350. [Google Scholar] [CrossRef]
- Greiner, M.T.; Chai, L.; Helander, M.G.; Tang, W.; Lu, Z. Transition Metal Oxide Work Functions: The Influence of Cation Oxidation State and Oxygen Vacancies. Adv. Funct. Mater. 2012, 22, 4557–4568. [Google Scholar] [CrossRef]
- Chen, C.; Cheng, K.-C.; Chagarov, E.; Kanicki, J. Crystalline In–Ga–Zn–O Density of States and Energy Band Structure Calculation Using Density Function Theory. Jpn. J. Appl. Phys. 2011, 50, 091102. [Google Scholar] [CrossRef] [Green Version]
- Allen, M.W.; Durbin, S.M. Influence of Oxygen Vacancies on Schottky Contacts to ZnO. Appl. Phys. Lett. 2008, 92, 122110. [Google Scholar] [CrossRef]
- Kim, Y.-M.; Kang, H.-B.; Kim, G.-H.; Hwang, C.-S.; Yoon, S.-M. Improvement in Device Performance of Vertical Thin-Film Transistors Using Atomic Layer Deposited IGZO Channel and Polyimide Spacer. IEEE Electron. Device Lett. 2017, 38, 1387–1389. [Google Scholar] [CrossRef]
- Pu, H.; Zhou, Q.; Yue, L.; Zhang, Q. Investigation of Oxygen Plasma Treatment on the Device Performance of Solution-Processed a-IGZO Thin Film Transistors. Appl. Surf. Sci. 2013, 283, 722–726. [Google Scholar] [CrossRef]
- Yamazaki, S.; Atsumi, T.; Dairiki, K.; Okazaki, K.; Kimizuka, N. In-Ga-Zn-Oxide Semiconductor and Its Transistor Characteristics. ECS J. Solid. State Sci. Technol. 2014, 3, Q3012. [Google Scholar] [CrossRef]
- Abliz, A. Hydrogenation of MG-Doped InGaZno Thin-Film Transistors for Enhanced Electrical Performance and Stability. IEEE Trans. Electron. Devices 2021, 68, 3379–3383. [Google Scholar] [CrossRef]
- Shen, P.-C.; Su, C.; Lin, Y.; Chou, A.-S.; Cheng, C.-C.; Park, J.-H.; Chiu, M.-H.; Lu, A.-Y.; Tang, H.-L.; Tavakoli, M.M. Ultralow Contact Resistance between Semimetal and Monolayer Semiconductors. Nature 2021, 593, 211–217. [Google Scholar] [CrossRef]
- Si, M.; Andler, J.; Lyu, X.; Niu, C.; Datta, S.; Agrawal, R.; Ye, P.D. Indium–Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating. ACS Nano 2020, 14, 11542–11547. [Google Scholar] [CrossRef]
- Wang, W.; Li, L.; Lu, C.; Liu, Y.; Lv, H.; Xu, G.; Ji, Z.; Liu, M. Analysis of the Contact Resistance in Amorphous InGaZnO Thin Film Transistors. Appl. Phys. Lett. 2015, 107, 063504. [Google Scholar] [CrossRef]
- On, N.; Kim, B.K.; Lee, S.; Kim, E.H.; Lim, J.H.; Jeong, J.K. Hot Carrier Effect in Self-Aligned In–Ga–Zn–O Thin-Film Transistors with Short Channel Length. IEEE Trans. Electron. Devices 2020, 67, 5544–5551. [Google Scholar] [CrossRef]
- Abliz, A.; Wan, D.; Chen, J.-Y.; Xu, L.; He, J.; Yang, Y.; Duan, H.; Liu, C.; Jiang, C.; Chen, H. Enhanced Reliability of In–Ga–ZnO Thin-Film Transistors through Design of Dual Passivation Layers. IEEE Trans. Electron. Devices 2018, 65, 2844–2849. [Google Scholar] [CrossRef]
- Abliz, A.; Nurmamat, P.; Wan, D. Rational Design of Oxide Heterostructure InGaZnO/TiO2 for High-Performance Thin-Film Transistors. Appl. Surf. Sci. 2023, 609, 155257. [Google Scholar] [CrossRef]
- Zhou, X.; Han, D.; Dong, J.; Li, H.; Yi, Z.; Zhang, X.; Wang, Y. The Effects of Post Annealing Process on the Electrical Performance and Stability of Al-Zn-O Thin-Film Transistors. IEEE Electron. Device Lett. 2020, 41, 569–572. [Google Scholar] [CrossRef]
- Chen, X.F.; He, G.; Liu, M.; Zhang, J.W.; Deng, B.; Wang, P.H.; Zhang, M.; Lv, J.G.; Sun, Z.Q. Modulation of Optical and Electrical Properties of Sputtering-Derived Amorphous InGaZnO Thin Films by Oxygen Partial Pressure. J. Alloys Compd. 2014, 615, 636–642. [Google Scholar] [CrossRef]
- Ling, L.; Tao, X.; Zhongxiao, S.; Chunliang, L.; Fei, M. Effect of Sputtering Pressure on Surface Roughness, Oxygen Vacancy and Electrical Properties of a-IGZO Thin Films. Rare Met. Mater. Eng. 2016, 45, 1992–1996. [Google Scholar] [CrossRef] [Green Version]
- Zhang, Y.; Zhang, H.; Yang, J.; Ding, X.; Zhang, J. Solution-Processed Yttrium-Doped IZTO Semiconductors for High-Stability Thin Film Transistor Applications. IEEE Trans. Electron. Devices 2019, 66, 5170–5176. [Google Scholar] [CrossRef]
- Tian, Y.; Han, D.; Cai, J.; Geng, Y.; Wang, W.; Wang, L.; Zhang, S.; Wang, Y. Low-Temperature Fabrication of Fully Transparent IGZO Thin Film Transistors on Glass Substrate. In Proceedings of the 2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC), Bangkok, Thailand, 3–5 December 2012; pp. 1–3. [Google Scholar]
- Nomura, K.; Takagi, A.; Kamiya, T.; Ohta, H.; Hirano, M.; Hosono, H. Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors. Jpn. J. Appl. Phys. 2006, 45, 4303. [Google Scholar] [CrossRef]
- Lee, E.; Kim, T.H.; Lee, S.W.; Kim, J.H.; Kim, J.; Jeong, T.G.; Ahn, J.-H.; Cho, B. Improved Electrical Performance of a Sol–Gel IGZO Transistor with High-k Al2O3 Gate Dielectric Achieved by Post Annealing. Nano Converg. 2019, 6, 1–8. [Google Scholar] [CrossRef] [Green Version]
- Zhang, C.; Li, D.; Lai, P.T.; Huang, X.D. An InGaZnO Charge-Trapping Nonvolatile Memory with the Same Structure of a Thin-Film Transistor. IEEE Electron. Device Lett. 2021, 43, 32–35. [Google Scholar] [CrossRef]
Disclaimer/Publisher’s Note: The statements, opinions and data contained in all publications are solely those of the individual author(s) and contributor(s) and not of MDPI and/or the editor(s). MDPI and/or the editor(s) disclaim responsibility for any injury to people or property resulting from any ideas, methods, instructions or products referred to in the content. |
© 2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
Share and Cite
Han, Y.; Lee, D.H.; Cho, E.-S.; Kwon, S.J.; Yoo, H. Argon and Oxygen Gas Flow Rate Dependency of Sputtering-Based Indium-Gallium-Zinc Oxide Thin-Film Transistors. Micromachines 2023, 14, 1394. https://doi.org/10.3390/mi14071394
Han Y, Lee DH, Cho E-S, Kwon SJ, Yoo H. Argon and Oxygen Gas Flow Rate Dependency of Sputtering-Based Indium-Gallium-Zinc Oxide Thin-Film Transistors. Micromachines. 2023; 14(7):1394. https://doi.org/10.3390/mi14071394
Chicago/Turabian StyleHan, Youngmin, Dong Hyun Lee, Eou-Sik Cho, Sang Jik Kwon, and Hocheon Yoo. 2023. "Argon and Oxygen Gas Flow Rate Dependency of Sputtering-Based Indium-Gallium-Zinc Oxide Thin-Film Transistors" Micromachines 14, no. 7: 1394. https://doi.org/10.3390/mi14071394