Next Article in Journal
A Novel Isolation Approach for GaN-Based Power Integrated Devices
Previous Article in Journal
Improved DC and RF Characteristics of GaN-Based Double-Channel HEMTs by Ultra-Thin AlN Back Barrier Layer
 
 
Article

Article Versions Notes

Micromachines 2024, 15(10), 1222; https://doi.org/10.3390/mi15101222
Action Date Notes Link
article xml file uploaded 30 September 2024 10:38 CEST Original file -
article xml uploaded. 30 September 2024 10:38 CEST Update https://www.mdpi.com/2072-666X/15/10/1222/xml
article pdf uploaded. 30 September 2024 10:38 CEST Version of Record https://www.mdpi.com/2072-666X/15/10/1222/pdf
article html file updated 30 September 2024 10:40 CEST Original file https://www.mdpi.com/2072-666X/15/10/1222/html
Back to TopTop