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Journal: Micromachines, 2024
Volume: 15
Number: 951

Article: Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers
Authors: by Barry O’Sullivan, Aarti Rathi, Alireza Alian, Sachin Yadav, Hao Yu, Arturo Sibaja-Hernandez, Uthayasankaran Peralagu, Bertrand Parvais, Adrian Chasin and Nadine Collaert
Link: https://www.mdpi.com/2072-666X/15/8/951

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