Impact of Program–Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability
Abstract
:1. Introduction
2. Methods
3. Results and Discussion
4. Conclusions
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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States | RT1 FBC | HT1 FBC | RT2 FBC | HT2 FBC |
---|---|---|---|---|
H To A | 4771 | 4753 | 4477 | 3709 |
A To B | 3097 | 7069 | 2984 | 7145 |
B To C | 1659 | 5359 | 1563 | 5352 |
C To D | 746 | 2111 | 829 | 2246 |
D To E | 1149 | 2344 | 1137 | 2480 |
E To F | 449 | 2148 | 420 | 2364 |
F To G | 96 | 289 | 112 | 363 |
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Zheng, X.; Wu, Y.; Dong, H.; Liu, Y.; Sang, P.; Xiao, L.; Zhan, X. Impact of Program–Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability. Micromachines 2024, 15, 1060. https://doi.org/10.3390/mi15091060
Zheng X, Wu Y, Dong H, Liu Y, Sang P, Xiao L, Zhan X. Impact of Program–Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability. Micromachines. 2024; 15(9):1060. https://doi.org/10.3390/mi15091060
Chicago/Turabian StyleZheng, Xuesong, Yifan Wu, Haitao Dong, Yizhi Liu, Pengpeng Sang, Liyi Xiao, and Xuepeng Zhan. 2024. "Impact of Program–Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability" Micromachines 15, no. 9: 1060. https://doi.org/10.3390/mi15091060