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Open AccessArticle
Modeling and Analysis of Wide Frequency Band Coaxial TSV Transmission Interconnect
by
Yujie Zhang
Yujie Zhang ,
Changle Zhi
Changle Zhi and
Gang Dong
Gang Dong *
School of Microelectronics, Xidian University, Xi’an 710000, China
*
Author to whom correspondence should be addressed.
Micromachines 2024, 15(9), 1127; https://doi.org/10.3390/mi15091127 (registering DOI)
Submission received: 1 August 2024
/
Revised: 22 August 2024
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Accepted: 28 August 2024
/
Published: 3 September 2024
Abstract
In this paper, we first build the 3D model of coaxial TSV(CTSV), RDL, and bump of the CTSV interconnect, and extract the equivalent circuit model of each part. Then, we get the S-parameters of the 3D and equivalent circuit model of the CTSV interconnect structure; the validity of the equivalent circuit model is verified by comparing the consistency of the S-parameters. The simulation results show that the maximum errors for the S11 and S21 parameters are 0.4% and 0.18%, respectively, which proves the validity of the equivalent circuit modeling in this paper. Finally, parametric analysis is performed to investigate the effect of different model parameters on the signal-transmission characteristics of the CTSV interconnect.
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MDPI and ACS Style
Zhang, Y.; Zhi, C.; Dong, G.
Modeling and Analysis of Wide Frequency Band Coaxial TSV Transmission Interconnect. Micromachines 2024, 15, 1127.
https://doi.org/10.3390/mi15091127
AMA Style
Zhang Y, Zhi C, Dong G.
Modeling and Analysis of Wide Frequency Band Coaxial TSV Transmission Interconnect. Micromachines. 2024; 15(9):1127.
https://doi.org/10.3390/mi15091127
Chicago/Turabian Style
Zhang, Yujie, Changle Zhi, and Gang Dong.
2024. "Modeling and Analysis of Wide Frequency Band Coaxial TSV Transmission Interconnect" Micromachines 15, no. 9: 1127.
https://doi.org/10.3390/mi15091127
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