AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts
Abstract
:1. Introduction
2. Experimental Details
3. Results and Discussion
3.1. Electrical Characterisation of Ohmic Contacts with Subcontact n-InGaN:Si Regrown Epilayer to AlGaN/GaN Heterostrucutres on Semi-Insulating Ammono-GaN Substrates
3.2. Electrical Characterization of AlGaN/GaN HEMTs on Semi-Insulating Ammono-GaN Substrates with Ohmic Contacts with Subcontact n-InGaN:Si Regrown Epilayer
3.3. Design and Fabrication of the on Microwave Power Amplifier Using AlGaN/GaN HEMTs on Semi-Insulating Ammono-GaN Substrates
4. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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Ohmic Contact | R (·mm) | R () | R () |
---|---|---|---|
recessed Ti/Al/Mo/Au | 0.8–1.1 | 0.86 | 3.4 |
Ti/Al/Mo/Au with regrown epilayer | 0.3–0.6 | 0.31 | 1.78 |
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Wojtasiak, W.; Góralczyk, M.; Gryglewski, D.; Zając, M.; Kucharski, R.; Prystawko, P.; Piotrowska, A.; Ekielski, M.; Kamińska, E.; Taube, A.; et al. AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts. Micromachines 2018, 9, 546. https://doi.org/10.3390/mi9110546
Wojtasiak W, Góralczyk M, Gryglewski D, Zając M, Kucharski R, Prystawko P, Piotrowska A, Ekielski M, Kamińska E, Taube A, et al. AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts. Micromachines. 2018; 9(11):546. https://doi.org/10.3390/mi9110546
Chicago/Turabian StyleWojtasiak, Wojciech, Marcin Góralczyk, Daniel Gryglewski, Marcin Zając, Robert Kucharski, Paweł Prystawko, Anna Piotrowska, Marek Ekielski, Eliana Kamińska, Andrzej Taube, and et al. 2018. "AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts" Micromachines 9, no. 11: 546. https://doi.org/10.3390/mi9110546