Erbium Luminescence Centres in Single- and Nano-Crystalline Diamond—Effects of Ion Implantation Fluence and Thermal Annealing
Abstract
:1. Introduction
2. Materials and Methods
2.1. Samples Preparation
2.2. Samples Characterization
3. Results
3.1. Er-Induced Defects Depth Distribution—Simulations Using SRIM
3.2. Er-Ion Implantation—As-Implanted Samples Characterization
3.3. Post-Implantation Thermal Annealing—As-Annealed Samples Characterization
4. Discussion
5. Conclusions
Author Contributions
Funding
Acknowledgments
Conflicts of Interest
References
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Peak No. | Peak Position | Peak Fitting Function | Peak/Band Description |
---|---|---|---|
1 | ≈1150 cm−1 | Voight | t-Pa = trans-polyacetylene (ω1) |
2 | ≈1200–1250 cm−1 | Gaussian | dnc (VDOS) = diamond crystallites |
3 | 1332 cm−1 | Lorentzian | d-peak = diamond |
4 | ≈1350 cm−1 | Voight | D-band (disordered) = sp2 rings |
5 | ≈1480 cm−1 | Voight | t-Pa = trans-polyacetylene (ω3) |
6 | ≈1580 cm−1 | Voight | G-band = all sp2 atoms in both rings and chains |
Ion-Implantation Conditions | Single-Crystalline Diamond * | NCD | ||
---|---|---|---|---|
RP [nm] | ΔRP [nm] | RP [nm] | ΔRP [nm] | |
SRIM Er+, 190 keV | 40 | 6 | - | - |
Er+, 190 keV, 1.0 × 1014 ions/cm2 | 44 | 9 | 42 | 21 |
Er+, 190 keV, 1.0 × 1015 ions/cm2 | 41 | 12 | 46 | 14 |
Er+, 190 keV, 5.0 × 1015 ions/cm2 | 44 | 12 | 50 | 15 |
Sample * | Description | ID/IG | AD/AG | Id/I(dnc) | sp3 [%] (from G-Band Position) ** | sp3 [%] (from AD/AG Ratio) ** |
---|---|---|---|---|---|---|
REF | Non-implanted | 1.20 | 1.82 | 0.51 | 35 | 33 |
1 × 1014 cm−2 (I-303) | As-implanted | 0.99 | 1.26 | 0.53 | 30 | 40 |
400 °C | 1.00 | 1.26 | 0.62 | 30 | 40 | |
600 °C | 0.81 | 0.87 | 0.42 | 30 | 45 | |
800 °C | 0.98 | 1.40 | 0.89 | 33 | 36 | |
1 × 1015 cm−2 (I-304) | As-implanted | 0.85 | 1.01 | 0.09 | 28 | 43 |
400 °C | 0.93 | 1.21 | 0.03 | 25 | 41 | |
600 °C | 1.11 | 1.90 | 0.07 | 24 | 31 | |
800 °C | 1.11 | 1.67 | 0.00 | 25 | 34 | |
5 × 1015 cm−2 (I-305) | As-implanted | 0.81 | 0.90 | 0.06 | 30 | 43 |
400 °C | 0.93 | 1.14 | 0.00 | 28 | 41 | |
600 °C | 1.15 | 2.13 | 0.00 | 25 | 29 | |
800 °C | 1.11 | 1.74 | 0.00 | 26 | 32 |
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Cajzl, J.; Nekvindová, P.; Macková, A.; Malinský, P.; Oswald, J.; Remeš, Z.; Varga, M.; Kromka, A.; Akhetova, B.; Böttger, R.; et al. Erbium Luminescence Centres in Single- and Nano-Crystalline Diamond—Effects of Ion Implantation Fluence and Thermal Annealing. Micromachines 2018, 9, 316. https://doi.org/10.3390/mi9070316
Cajzl J, Nekvindová P, Macková A, Malinský P, Oswald J, Remeš Z, Varga M, Kromka A, Akhetova B, Böttger R, et al. Erbium Luminescence Centres in Single- and Nano-Crystalline Diamond—Effects of Ion Implantation Fluence and Thermal Annealing. Micromachines. 2018; 9(7):316. https://doi.org/10.3390/mi9070316
Chicago/Turabian StyleCajzl, Jakub, Pavla Nekvindová, Anna Macková, Petr Malinský, Jiří Oswald, Zdeněk Remeš, Marián Varga, Alexander Kromka, Banu Akhetova, Roman Böttger, and et al. 2018. "Erbium Luminescence Centres in Single- and Nano-Crystalline Diamond—Effects of Ion Implantation Fluence and Thermal Annealing" Micromachines 9, no. 7: 316. https://doi.org/10.3390/mi9070316