Faraji, S.; Meissner, E.; Weingärtner, R.; Besendörfer, S.; Friedrich, J.
In-Situ Preparation of GaN Sacrificial Layers on Sapphire Substrate in MOVPE Reactor for Self-Separation of the Overgrown GaN Crystal. Crystals 2020, 10, 1100.
https://doi.org/10.3390/cryst10121100
AMA Style
Faraji S, Meissner E, Weingärtner R, Besendörfer S, Friedrich J.
In-Situ Preparation of GaN Sacrificial Layers on Sapphire Substrate in MOVPE Reactor for Self-Separation of the Overgrown GaN Crystal. Crystals. 2020; 10(12):1100.
https://doi.org/10.3390/cryst10121100
Chicago/Turabian Style
Faraji, Sepideh, Elke Meissner, Roland Weingärtner, Sven Besendörfer, and Jochen Friedrich.
2020. "In-Situ Preparation of GaN Sacrificial Layers on Sapphire Substrate in MOVPE Reactor for Self-Separation of the Overgrown GaN Crystal" Crystals 10, no. 12: 1100.
https://doi.org/10.3390/cryst10121100
APA Style
Faraji, S., Meissner, E., Weingärtner, R., Besendörfer, S., & Friedrich, J.
(2020). In-Situ Preparation of GaN Sacrificial Layers on Sapphire Substrate in MOVPE Reactor for Self-Separation of the Overgrown GaN Crystal. Crystals, 10(12), 1100.
https://doi.org/10.3390/cryst10121100