Growth of Thin AlN Films on Si Wafers by Reactive Magnetron Sputtering: Role of Processing Pressure, Magnetron Power and Nitrogen/Argon Gas Flow Ratio
Round 1
Reviewer 1 Report
Comments to the Author
In this work, the authors have systematically studied the processing pressure magnetron power and nitrogen/argon flow ratio on the growth of AlN films. However, in order to make the manuscript better, the authors urgently need to address the following issues.
1.In Figure2, the parameters corresponding to N2/Ar ratios of 27% and 50%, respectively, are confusingly expressed and unclear, and it is suggested to redraw the figure.
2.The expression corresponding to Figure3 in the text" has good crystallinity due to the low FWHM", where the specific FWHM is not given.
3.The XRD at different pressures and powers in subsections 3.2.1 and 3.2.2 are not given, and the physical phase should be determined before other analyses are performed, and data are missing.
4.In page 8, it is mentioned that "the increase in substrate temperature leads to an increase in stress", and this conclusion in detail if it is derived by yourself.
5.In Subsection 3.2.1, it is mentioned that "the RMS, FWHM, and stress values are minimized at 50% N2/Ar ratio ", which should be the best parameter, why should 27% be used at different power levels in subsection 3.2.2below?
Author Response
See uploaded Response to reviewer1.pdf file
Author Response File: 
Author Response.pdf
Reviewer 2 Report
The manuscript entitled, “Growth of thin AlN films on Si wafers by reactive magnetron
sputtering: role of processing pressure, magnetron power and nitrogen/argon gas flow ratio” by Sandager et al. reports growth of AlN thin films using the reactive magnetron sputtering process and the role of processing parameters on the structure/microstructure. The manuscript lacks on several fronts and presents a trivial and in complete analysis of data and therefore not recommended for publication. My detailed comments are listed below:
1. Introduction: Text book type write up with too much details about SZM model. AlN thin films have been very well studied and a vast literature exists it was required that a comprehensive account of literature review must be presented and the aim of the work carried out should have been justified.
2. Materials and Methods: Too much details of trivial set-up and illustrations. Fig. 1 can be omitted and placed in supplemental material etc.
3. Fig. 2: Not at all clear van be replaced with a table. It is required authors state all samples prepared and studied and present XRD data of all samples in figure 3. Also, all peaks must be identified and the value of lattice parameter and crystallite size should be compared rather than the FWHM. The value of FWHM mentioned in line #204 is 0.14 deg. but in fig. 4 and 7, the minimum value starts from 0.18 deg.
4. Line #163: “while low FWHW is typically assigned to good crystallinity [ref].” What us [ref] here?
5. Fig. 4 Why there is no error bar on film stress?
6. The magnetron powers (up to 1200 W) used are very high for a 3-inch diameter target, please state how such large values can be sustained.
7. What was the composition of AlN samples? And how does it vary with the process parameters.
Some mechanical deficiencies are listed below:
1. Introduction: line 41…T/Tm…define T as well,
2. Line 65: However, high temperature…..cooling to room temperature.. This sentence is not clear…
3. Line 68: This problem… Sentence is not clear.. recreate the sentence
4. Line 70-72: It is also found that….AlN growth. Clearly mention about the Ar/N pressure ratio…
5. Line 76: Attempts at … Sentence is not clear
6. Line 94: (8-9 x 10)-9 mbar… State correct the pressure value
7. Line 102: AlN deposition… Sentence is not clear. Reframe the sentence.
8. Line 104:… temperature 200oC… clearly mention about the temperature..
9. Line 116-117: The film thickness..…Cauchy model. Clearly explain the use of Cauchy model.
10. Line 117: The thickness… wafer. Sentence is not clear.
11.Line 133: The conditions…. Sentence is not clear..
12.line 136: Increasing the pressure…ways. Clearly explain the meaning of the “INCREASING THE PRESSURE”..
13.Figure 2. What is the meaning of PROCESSING PRESSURE. Author also explains clearly about the N2/Ar pressure.
14.Line 160: But…rate. Sentence is not clear.
15.Figure2. Clearly explain the decrease in the deposition rate for 1200W and 600W power.
16.Figure 3. Explain the origin of the peak at 29o in XRD pattern.
17. Figure 4: figure is not clear. Points at 0.6Pa and 1Pa are in error bar.
18.Line 204-205: FWHM is 0.14o, but in figure 4 it is not showing. Author should explain it.
19.Figure 4 and 7: error bar is varying.
20. Line 218-219: Authors are not showing any data or figure which is related to the film quality with respect to the substrate temperature.. how they can say about the substrate temperature study in these lines.
21. Figure 6(a & d), Figure 8(a&c) and (b&d). AFM and SEM image for constant processing pressure at 02Pa and N2/Ar ratio is 27%. But magnetron power are varying 600W[RMS=3.9nm], 300W RMS=5.8nm], and 900W RMS=3.4nm], respectively. What is conclusion about this study.
22.line 234-237: At the same time…quality. Sentence is not clear…
23.Line 237-239: Author is only taking about the quality of film. what is the effect of variation of nitrogen pressure on crystal structure or different form of Aluminium nitride states.
Author Response
See uploaded Response to reviewer2.pdf file
Author Response File: Author Response.pdf
Round 2
Reviewer 1 Report
我们同意接收本文。
Reviewer 2 Report
Authors have sufficiently revised the manuscript and it may now be considered for publication.
