Chteoui, R.; Lotfy, K.; Seddeek, M.A.; El-Dali, A.; Hassanin, W.S.
Moore–Gibson–Thompson Stability Model in a Two-Temperature Photonic Semiconductor Excited Medium Affected by Rotation and Initial Stress. Crystals 2022, 12, 1720.
https://doi.org/10.3390/cryst12121720
AMA Style
Chteoui R, Lotfy K, Seddeek MA, El-Dali A, Hassanin WS.
Moore–Gibson–Thompson Stability Model in a Two-Temperature Photonic Semiconductor Excited Medium Affected by Rotation and Initial Stress. Crystals. 2022; 12(12):1720.
https://doi.org/10.3390/cryst12121720
Chicago/Turabian Style
Chteoui, Riadh, Kh. Lotfy, M. A. Seddeek, A. El-Dali, and W. S. Hassanin.
2022. "Moore–Gibson–Thompson Stability Model in a Two-Temperature Photonic Semiconductor Excited Medium Affected by Rotation and Initial Stress" Crystals 12, no. 12: 1720.
https://doi.org/10.3390/cryst12121720
APA Style
Chteoui, R., Lotfy, K., Seddeek, M. A., El-Dali, A., & Hassanin, W. S.
(2022). Moore–Gibson–Thompson Stability Model in a Two-Temperature Photonic Semiconductor Excited Medium Affected by Rotation and Initial Stress. Crystals, 12(12), 1720.
https://doi.org/10.3390/cryst12121720