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Journal: Crystals, 2022
Volume: 12
Number: 295

Article: Channel Mobility Model of Nano-Node MOSFETs Incorporating Drain-and-Gate Electric Fields
Authors: by Shou-Yen Chao, Heng-Sheng Huang, Ping-Ray Huang, Chun-Yeon Lin and Mu-Chun Wang
Link: https://www.mdpi.com/2073-4352/12/2/295

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