Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer

Wong, Matthew S.; Chan, Philip; Lim, Norleakvisoth; Zhang, Haojun; White, Ryan C.; Speck, James S.; Denbaars, Steven P.; Nakamura, Shuji

doi:10.3390/cryst12050721

Open AccessArticle

Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer

by

Matthew S. Wong

^1,*

,

Philip Chan

²,

Norleakvisoth Lim

³,

Haojun Zhang

¹,

Ryan C. White

¹

,

James S. Speck

¹,

Steven P. Denbaars

^1,2 and

Shuji Nakamura

^1,2

¹

Materials Department, University of California, Santa Barbara, CA 93106, USA

²

Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA

³

Department of Chemical Engineering, University of California, Santa Barbara, CA 93106, USA

^*

Author to whom correspondence should be addressed.

Crystals 2022, 12(5), 721; https://doi.org/10.3390/cryst12050721

Submission received: 21 April 2022 / Revised: 17 May 2022 / Accepted: 17 May 2022 / Published: 19 May 2022

(This article belongs to the Special Issue GaN-Based Materials and Devices)

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Abstract

In this study, III-nitride red micro-light-emitting diodes (µLEDs) with ultralow forward voltage are demonstrated on a strain relaxed template. The forward voltage ranges between 2.00 V and 2.05 V at 20 A/cm² for device dimensions from 5 × 5 to 100 × 100 µm². The µLEDs emit at 692 nm at 5 A/cm² and 637 nm at 100 A/cm², corresponding to a blueshift of 55 nm due to the screening of the internal electric field in the quantum wells. The maximum external quantum efficiency and wall-plug efficiency of µLEDs are 0.31% and 0.21%, respectively. This suggests that efficient III-nitride red µLEDs can be realized with further material optimizations.

Keywords: red micro-light-emitting diodes; strain relaxed template; III-nitride

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MDPI and ACS Style

Wong, M.S.; Chan, P.; Lim, N.; Zhang, H.; White, R.C.; Speck, J.S.; Denbaars, S.P.; Nakamura, S. Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer. Crystals 2022, 12, 721. https://doi.org/10.3390/cryst12050721

AMA Style

Wong MS, Chan P, Lim N, Zhang H, White RC, Speck JS, Denbaars SP, Nakamura S. Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer. Crystals. 2022; 12(5):721. https://doi.org/10.3390/cryst12050721

Chicago/Turabian Style

Wong, Matthew S., Philip Chan, Norleakvisoth Lim, Haojun Zhang, Ryan C. White, James S. Speck, Steven P. Denbaars, and Shuji Nakamura. 2022. "Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer" Crystals 12, no. 5: 721. https://doi.org/10.3390/cryst12050721

APA Style

Wong, M. S., Chan, P., Lim, N., Zhang, H., White, R. C., Speck, J. S., Denbaars, S. P., & Nakamura, S. (2022). Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer. Crystals, 12(5), 721. https://doi.org/10.3390/cryst12050721

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Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer

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