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Volume 12
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10.3390/cryst12081108
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Article

An Analysis of Mobility Influence in Optoelectronics Parameters in an InGaN/GaN Blue LED

by
Sarai Zarate-Galvez
1,
Abel Garcia-Barrientos
2,*,
Roberto Ambrosio-Lazaro
3,
Mario Garcia-Ramirez
4,
Enrique Stevens-Navarro
2,
Jairo Plaza-Castillo
5,
Jose Hoyo-Montaño
6 and
Obed Perez-Cortes
7
1
Instituto de Investigación en Comunicación Óptica, Universidad Autónoma de San Luis Potosí, San Luis Potosi 78210, Mexico
2
Faculty of Science, Universidad Autónoma de San Luis Potosí (UASLP), San Luis Potosi 78295, Mexico
3
Faculty of Electronics, Benemerita Universidad Autonoma de Puebla, Puebla 72000, Mexico
4
Research Centre for Applied Science and Engineering, UDG, Guadalajara 44100, Mexico
5
Department of Physics, Universidad del Atlantico, Barranquilla 081008, Colombia
6
Deparment of Electronics, Instituto Tecnologico de Hermosillo, Hermosillo 83170, Mexico
7
Área Académica de Computación y Electrónica, Universidad Autonoma del Estado de Hidalgo, Mineral de la Reforma 42184, Mexico
*
Author to whom correspondence should be addressed.
Crystals 2022, 12(8), 1108; https://doi.org/10.3390/cryst12081108
Submission received: 2 July 2022 / Revised: 30 July 2022 / Accepted: 4 August 2022 / Published: 8 August 2022
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Abstract

Simulations on mobility influence in optoelectronics parameters from an InGaN/GaN blue LED using the Nextnano++ software arepresented in this paper. These simulations were performed by changing the hole and electron mobility value for the material compounds according to experimental, theoretical, and doping-concentration data already reported in the literature. The power law mobility is used for the current calculation in the quantum drift-diffusion model. The results indicate the lower hole and electron leakage currents correspond to the lowest mobility values for the InGaN alloy, the greatest amount of recombination occurs in the extreme wells within the active layer of the LED and the stable emission is at 3.6 V with peak wavelength λ^LED=456.7 nm and full width at half maximum FWHM~11.1 nm for the three mobilities. Although experimental and theoretical mobility values reach higher carrier density and recombination, the photon emission is broader and unstable. Additionally, the doping-concentration mobility results in lower wavelength shifts and narrows FWHM, making it more stable. The highest quantum efficiency achieved by doping-concentration mobility is only in the breakdown voltage (ηdop−max=60.43%), which is the IQE value comparable to similar LEDs and is more useful for these kinds of semiconductor devices.
Keywords: InGaN/GaN; blue light emitting diodes; quantum efficiency; quantum drift-diffusion model InGaN/GaN; blue light emitting diodes; quantum efficiency; quantum drift-diffusion model

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MDPI and ACS Style

Zarate-Galvez, S.; Garcia-Barrientos, A.; Ambrosio-Lazaro, R.; Garcia-Ramirez, M.; Stevens-Navarro, E.; Plaza-Castillo, J.; Hoyo-Montaño, J.; Perez-Cortes, O. An Analysis of Mobility Influence in Optoelectronics Parameters in an InGaN/GaN Blue LED. Crystals 2022, 12, 1108. https://doi.org/10.3390/cryst12081108

AMA Style

Zarate-Galvez S, Garcia-Barrientos A, Ambrosio-Lazaro R, Garcia-Ramirez M, Stevens-Navarro E, Plaza-Castillo J, Hoyo-Montaño J, Perez-Cortes O. An Analysis of Mobility Influence in Optoelectronics Parameters in an InGaN/GaN Blue LED. Crystals. 2022; 12(8):1108. https://doi.org/10.3390/cryst12081108

Chicago/Turabian Style

Zarate-Galvez, Sarai, Abel Garcia-Barrientos, Roberto Ambrosio-Lazaro, Mario Garcia-Ramirez, Enrique Stevens-Navarro, Jairo Plaza-Castillo, Jose Hoyo-Montaño, and Obed Perez-Cortes. 2022. "An Analysis of Mobility Influence in Optoelectronics Parameters in an InGaN/GaN Blue LED" Crystals 12, no. 8: 1108. https://doi.org/10.3390/cryst12081108

APA Style

Zarate-Galvez, S., Garcia-Barrientos, A., Ambrosio-Lazaro, R., Garcia-Ramirez, M., Stevens-Navarro, E., Plaza-Castillo, J., Hoyo-Montaño, J., & Perez-Cortes, O. (2022). An Analysis of Mobility Influence in Optoelectronics Parameters in an InGaN/GaN Blue LED. Crystals, 12(8), 1108. https://doi.org/10.3390/cryst12081108

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