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Journal: Crystals, 2023
Volume: 13
Number: 231
Article:
MOCVD-grown β-Ga2O3 as a Gate Dielectric on AlGaN/GaN-Based Heterojunction Field Effect Transistor
Authors:
by
Samiul Hasan, Mohi Uddin Jewel, Scott R. Crittenden, Dongkyu Lee, Vitaliy Avrutin, Ümit Özgür, Hadis Morkoç and Iftikhar Ahmad
Link:
https://www.mdpi.com/2073-4352/13/2/231
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