Active and Programmable Metasurfaces with Semiconductor Materials and Devices

Cui, Can; Ma, Junqing; Chen, Kai; Wang, Xinjie; Sun, Tao; Wang, Qingpu; Zhang, Xijian; Zhang, Yifei

doi:10.3390/cryst13020279

Open AccessReview

Active and Programmable Metasurfaces with Semiconductor Materials and Devices

by

Can Cui

,

Junqing Ma

,

Kai Chen

,

Xinjie Wang

,

Tao Sun

,

Qingpu Wang

,

Xijian Zhang

and

Yifei Zhang

^*

Shandong Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan 250100, China

^*

Author to whom correspondence should be addressed.

Crystals 2023, 13(2), 279; https://doi.org/10.3390/cryst13020279

Submission received: 16 December 2022 / Revised: 31 January 2023 / Accepted: 2 February 2023 / Published: 6 February 2023

(This article belongs to the Special Issue Terahertz Metamaterials and Active Modulation)

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Abstract

Active metasurfaces provide promising tunabilities to artificial meta−atoms with unnatural optical properties and have found important applications in dynamic cloaking, reconfigurable intelligent surfaces, etc. As the development of semiconductor technologies, electrically controlled metasurfaces with semiconductor materials and devices have become the most promising candidate for the dynamic and programmable applications due to the large modulation range, compact footprint, pixel−control capability, and small switching time. Here, a technical review of active and programmable metasurfaces is given in terms of semiconductors, which consists of metasurfaces with diodes, transistors, and newly rising semiconductor materials. Physical models, equivalent circuits, recent advances, and development trends are discussed collectively and critically. This review represents a broad introduction for readers just entering this interesting field and provides perspective and depth for those well−established.

Keywords: metasurface; active modulation; programmable metasurface; semiconductor materials; diodes; transistors

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MDPI and ACS Style

Cui, C.; Ma, J.; Chen, K.; Wang, X.; Sun, T.; Wang, Q.; Zhang, X.; Zhang, Y. Active and Programmable Metasurfaces with Semiconductor Materials and Devices. Crystals 2023, 13, 279. https://doi.org/10.3390/cryst13020279

AMA Style

Cui C, Ma J, Chen K, Wang X, Sun T, Wang Q, Zhang X, Zhang Y. Active and Programmable Metasurfaces with Semiconductor Materials and Devices. Crystals. 2023; 13(2):279. https://doi.org/10.3390/cryst13020279

Chicago/Turabian Style

Cui, Can, Junqing Ma, Kai Chen, Xinjie Wang, Tao Sun, Qingpu Wang, Xijian Zhang, and Yifei Zhang. 2023. "Active and Programmable Metasurfaces with Semiconductor Materials and Devices" Crystals 13, no. 2: 279. https://doi.org/10.3390/cryst13020279

APA Style

Cui, C., Ma, J., Chen, K., Wang, X., Sun, T., Wang, Q., Zhang, X., & Zhang, Y. (2023). Active and Programmable Metasurfaces with Semiconductor Materials and Devices. Crystals, 13(2), 279. https://doi.org/10.3390/cryst13020279

Note that from the first issue of 2016, this journal uses article numbers instead of page numbers. See further details here.

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Active and Programmable Metasurfaces with Semiconductor Materials and Devices

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