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Journal: CrystalsVolume: 14Number: 485
Article: Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42:1 Selectivity to Al0.24Ga0.76N
  • Authors:
  • Emmanuel Kayede*,
  • Emre Akso and
  • Brian Romanczyk
  • et al.
Link: https://www.mdpi.com/2073-4352/14/6/485

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