Electrical and Mechanical Analysis of Different TSV Geometries
Abstract
:1. Introduction
2. Electrical Investigation of Through-Silicon Via (TSV) Structures
2.1. Through-Silicon Via (TSV) Structure and Manufacturing Process
2.2. Electrical Simulation
2.3. Characteristic Impedance of Multilayer TSV
2.4. Characteristic Impedance for Different TSV Shapes
3. Mechanical Investigation of TSV Structures
3.1. Finite Element Simulation (FEM)
3.2. Protrusion on Single Layer TSV
3.3. Protrusion on Multilayer TSVs
3.4. Effect of TSV Height on the Protrusion
3.5. The Protrusion and Stress Analysis for Different TSV Shapes
4. Conclusions
Author Contributions
Funding
Acknowledgments
Conflicts of Interest
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Mat. | Poisson’s Ratio | CTE (ppm/k) | Young Modulus (GPa) | Plastic Curve, Stress (MPa) vs. Strain |
---|---|---|---|---|
Cu | 0.34 | 17.3 | 121 | [email protected] [email protected] [email protected] [email protected] [email protected] |
Si | νyz = 0.36 νzx = 0.28 νxy = 0.064 | 2.8 | Ex = Ey = 169 Ez = 130 Gyz = Gzx = 79.6 Gxy = 50.9 | Fully elastic |
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Jeong, I.H.; Eslami Majd, A.; Jung, J.P.; Ekere, N.N. Electrical and Mechanical Analysis of Different TSV Geometries. Metals 2020, 10, 467. https://doi.org/10.3390/met10040467
Jeong IH, Eslami Majd A, Jung JP, Ekere NN. Electrical and Mechanical Analysis of Different TSV Geometries. Metals. 2020; 10(4):467. https://doi.org/10.3390/met10040467
Chicago/Turabian StyleJeong, Il Ho, Alireza Eslami Majd, Jae Pil Jung, and Nduka Nnamdi Ekere. 2020. "Electrical and Mechanical Analysis of Different TSV Geometries" Metals 10, no. 4: 467. https://doi.org/10.3390/met10040467