Gradually Tunable Conductance in TiO2/Al2O3 Bilayer Resistors for Synaptic Device
Abstract
:1. Introduction
2. Materials and Methods
3. Results and Discussion
4. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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Ryu, H.; Kim, S. Gradually Tunable Conductance in TiO2/Al2O3 Bilayer Resistors for Synaptic Device. Metals 2021, 11, 440. https://doi.org/10.3390/met11030440
Ryu H, Kim S. Gradually Tunable Conductance in TiO2/Al2O3 Bilayer Resistors for Synaptic Device. Metals. 2021; 11(3):440. https://doi.org/10.3390/met11030440
Chicago/Turabian StyleRyu, Hojeong, and Sungjun Kim. 2021. "Gradually Tunable Conductance in TiO2/Al2O3 Bilayer Resistors for Synaptic Device" Metals 11, no. 3: 440. https://doi.org/10.3390/met11030440