Using SKPFM to Determine the Influence of Deformation-Induced Dislocations on the Volta Potential of Copper
Abstract
:1. Introduction
2. Materials and Methods
2.1. Material and Heat Treatment
2.2. Rolling Deformation Technology
2.3. Metallographic Observation
2.4. EBSD Measurements
2.5. SKPFM Measurement
3. Result
3.1. The Influence of the Tip-to-Surface Distance on the Volta Potential
3.2. EBSD Analysis of Copper with Different Rolling Deformations
3.3. Influence of Different Rolling Deformations on the Volta Potential of Copper
4. Discussion
- 1.
- The effects of orientation differences of the low-angle grain boundaries on the Volta potential are neglected.
- 2.
- The SKPFM scanned area is divided into a dislocation aggregation area and an undeformed area, where electrons flow from the substrate to the tip. The electronic flow of the material is modelled as several parallel tunnels, which are divided into dislocation tunnels and perfect lattice tunnels. Deformed region containing high density of dislocation branches, while undeformed region containing dislocation- free branches. For a fixed probe collection area, increasing the dislocation density is equivalent to increasing the proportion of electrons flowing through the dislocation tunnel.
- 3.
- The circuit model shown in Figure 11 is constructed for convenience of calculation and analysis, where each parallel tunnel is modelled as a branch between the power supply element and the parallel circuits. Considering the physical meaning of the Fermi level shows that a high Fermi level facilitates electron escape. That is, a high Fermi level essentially increases the electromotive force of a branch. Hence, the intense of the voltage difference (Udf and Ud) is related to the Fermi level. The branch resistance (Rdf and Rd) depends on the resistance of electrons flowing through the parallel tunnel (the degree of lattice distortion). Finally, the calculated voltage U1-0 is expressed as the Volta potential from the tip to the substrate.
5. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Acknowledgments
Conflicts of Interest
Appendix A
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Zhang, Y.; Shi, W.; Xiang, S. Using SKPFM to Determine the Influence of Deformation-Induced Dislocations on the Volta Potential of Copper. Metals 2021, 11, 1166. https://doi.org/10.3390/met11081166
Zhang Y, Shi W, Xiang S. Using SKPFM to Determine the Influence of Deformation-Induced Dislocations on the Volta Potential of Copper. Metals. 2021; 11(8):1166. https://doi.org/10.3390/met11081166
Chicago/Turabian StyleZhang, Yang, Wei Shi, and Song Xiang. 2021. "Using SKPFM to Determine the Influence of Deformation-Induced Dislocations on the Volta Potential of Copper" Metals 11, no. 8: 1166. https://doi.org/10.3390/met11081166