Lee, S.; Yoon, J.-S.; Lee, J.; Jeong, J.; Yun, H.; Lim, J.; Lee, S.; Baek, R.-H.
Novel Modeling Approach to Analyze Threshold Voltage Variability in Short Gate-Length (15–22 nm) Nanowire FETs with Various Channel Diameters. Nanomaterials 2022, 12, 1721.
https://doi.org/10.3390/nano12101721
AMA Style
Lee S, Yoon J-S, Lee J, Jeong J, Yun H, Lim J, Lee S, Baek R-H.
Novel Modeling Approach to Analyze Threshold Voltage Variability in Short Gate-Length (15–22 nm) Nanowire FETs with Various Channel Diameters. Nanomaterials. 2022; 12(10):1721.
https://doi.org/10.3390/nano12101721
Chicago/Turabian Style
Lee, Seunghwan, Jun-Sik Yoon, Junjong Lee, Jinsu Jeong, Hyeok Yun, Jaewan Lim, Sanguk Lee, and Rock-Hyun Baek.
2022. "Novel Modeling Approach to Analyze Threshold Voltage Variability in Short Gate-Length (15–22 nm) Nanowire FETs with Various Channel Diameters" Nanomaterials 12, no. 10: 1721.
https://doi.org/10.3390/nano12101721
APA Style
Lee, S., Yoon, J.-S., Lee, J., Jeong, J., Yun, H., Lim, J., Lee, S., & Baek, R.-H.
(2022). Novel Modeling Approach to Analyze Threshold Voltage Variability in Short Gate-Length (15–22 nm) Nanowire FETs with Various Channel Diameters. Nanomaterials, 12(10), 1721.
https://doi.org/10.3390/nano12101721