Enhanced Electrical Properties of Copper Nitride Films Deposited via High Power Impulse Magnetron Sputtering
Abstract
:1. Introduction
2. Materials and Methods
3. Results
4. Discussion
5. Conclusions
Supplementary Materials
Author Contributions
Funding
Acknowledgments
Conflicts of Interest
References
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Material | Growth Method | Resistivity (Ω cm) | Carrier Concentration (cm−3) | Mobility (cm2V−1s−1) | Type | Year | Ref. |
---|---|---|---|---|---|---|---|
Cu3N | RF-Sputter | 1.1 × 103 | - | - | n | 2012 | [41] |
Cu3N | DC-Sputter | 20 | - | - | n | 2011 | [42] |
Cu3N-(Zr, Cr) | RF-Sputter | 1.65 × 10−4 | - | - | n | 2017 | [43] |
Cu3N-Mg | RF-Sputter | 1 | 6.8 × 1018 | 6 | n | 2016 | [44] |
Cu3N-Pd | RF-Sputter | 1.08 × 10−3 | 1021 | 18.9 | n | 2013 | [45] |
Cu3N | RF-Sputter | 100 | 1015 | 1 | p | 2016 | [46] |
Cu3N | RF-Sputter | 120 | - | - | p | 2015 | [47] |
Cu3N | DC-Sputter | 0.33 | 1.29 × 1019 | 1.45 | p | 2019 | [21] |
Cu3N | DCMS | 18.82 | - | - | p | 2022 | This Study |
Cu3N | HiPIMS | 0.024 | 1.43 × 1020 | 1.79 | p | 2022 | This Study |
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Chen, Y.-H.; Lee, P.-I.; Sakalley, S.; Wen, C.-K.; Cheng, W.-C.; Sun, H.; Chen, S.-C. Enhanced Electrical Properties of Copper Nitride Films Deposited via High Power Impulse Magnetron Sputtering. Nanomaterials 2022, 12, 2814. https://doi.org/10.3390/nano12162814
Chen Y-H, Lee P-I, Sakalley S, Wen C-K, Cheng W-C, Sun H, Chen S-C. Enhanced Electrical Properties of Copper Nitride Films Deposited via High Power Impulse Magnetron Sputtering. Nanomaterials. 2022; 12(16):2814. https://doi.org/10.3390/nano12162814
Chicago/Turabian StyleChen, Yin-Hung, Pei-Ing Lee, Shikha Sakalley, Chao-Kuang Wen, Wei-Chun Cheng, Hui Sun, and Sheng-Chi Chen. 2022. "Enhanced Electrical Properties of Copper Nitride Films Deposited via High Power Impulse Magnetron Sputtering" Nanomaterials 12, no. 16: 2814. https://doi.org/10.3390/nano12162814