Cañas, J.; Reyes, D.F.; Zakhtser, A.; Dussarrat, C.; Teramoto, T.; Gutiérrez, M.; Gheeraert, E.
High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry. Nanomaterials 2022, 12, 4125.
https://doi.org/10.3390/nano12234125
AMA Style
Cañas J, Reyes DF, Zakhtser A, Dussarrat C, Teramoto T, Gutiérrez M, Gheeraert E.
High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry. Nanomaterials. 2022; 12(23):4125.
https://doi.org/10.3390/nano12234125
Chicago/Turabian Style
Cañas, Jesús, Daniel F. Reyes, Alter Zakhtser, Christian Dussarrat, Takashi Teramoto, Marina Gutiérrez, and Etienne Gheeraert.
2022. "High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry" Nanomaterials 12, no. 23: 4125.
https://doi.org/10.3390/nano12234125
APA Style
Cañas, J., Reyes, D. F., Zakhtser, A., Dussarrat, C., Teramoto, T., Gutiérrez, M., & Gheeraert, E.
(2022). High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry. Nanomaterials, 12(23), 4125.
https://doi.org/10.3390/nano12234125