Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration
Abstract
:1. Introduction
2. Epitaxial GaAs/Si HSs Growth
3. Results
4. Discussion
5. InAs/AlAs SAQDs on the GaAs/Si HS
6. Conclusions
Author Contributions
Funding
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
Appendix A
Parameter | Value |
---|---|
5.65325 (Å) a | |
3.88 × 10−5 (Å/K) a | |
1.81 × 10−5 (Å/K) b | |
C11 | 1221 (GPa) a |
C12 | 566 (GPa) a |
−7.17 (eV) a | |
−1.16 (eV) a | |
−2 (eV) a | |
0.341 (eV) a |
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HS | I | I-a | II | II-a | II-a2 |
---|---|---|---|---|---|
Growth scenario | No LT-GaAs | No LT-GaAs | LT-GaAs | LT-GaAs | LT-GaAs |
Post-growth annealing | No | Yes | No | Yes | Yes |
TS increasing scenario after the second LT-GaAs layer | - | - | Gradually, during the growth | Gradually, during the growth | Cyclic annealing |
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Petrushkov, M.O.; Abramkin, D.S.; Emelyanov, E.A.; Putyato, M.A.; Komkov, O.S.; Firsov, D.D.; Vasev, A.V.; Yesin, M.Y.; Bakarov, A.K.; Loshkarev, I.D.; et al. Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration. Nanomaterials 2022, 12, 4449. https://doi.org/10.3390/nano12244449
Petrushkov MO, Abramkin DS, Emelyanov EA, Putyato MA, Komkov OS, Firsov DD, Vasev AV, Yesin MY, Bakarov AK, Loshkarev ID, et al. Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration. Nanomaterials. 2022; 12(24):4449. https://doi.org/10.3390/nano12244449
Chicago/Turabian StylePetrushkov, Mikhail O., Demid S. Abramkin, Eugeny A. Emelyanov, Mikhail A. Putyato, Oleg S. Komkov, Dmitrii D. Firsov, Andrey V. Vasev, Mikhail Yu. Yesin, Askhat K. Bakarov, Ivan D. Loshkarev, and et al. 2022. "Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration" Nanomaterials 12, no. 24: 4449. https://doi.org/10.3390/nano12244449
APA StylePetrushkov, M. O., Abramkin, D. S., Emelyanov, E. A., Putyato, M. A., Komkov, O. S., Firsov, D. D., Vasev, A. V., Yesin, M. Y., Bakarov, A. K., Loshkarev, I. D., Gutakovskii, A. K., Atuchin, V. V., & Preobrazhenskii, V. V. (2022). Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration. Nanomaterials, 12(24), 4449. https://doi.org/10.3390/nano12244449