Article Versions Notes

Chen T, Leng K, Ma Z, Jiang X, Chen K, Li W, Xu J, Xu L. Tracing the Si Dangling Bond Nanopathway Evolution ina-SiN_x:H Resistive Switching Memory by the Transient Current. Nanomaterials. 2023; 13(1):85. https://doi.org/10.3390/nano13010085

Chen, Tong, Kangmin Leng, Zhongyuan Ma, Xiaofan Jiang, Kunji Chen, Wei Li, Jun Xu, and Ling Xu. 2023. "Tracing the Si Dangling Bond Nanopathway Evolution ina-SiN_x:H Resistive Switching Memory by the Transient Current" Nanomaterials 13, no. 1: 85. https://doi.org/10.3390/nano13010085

Chen, T., Leng, K., Ma, Z., Jiang, X., Chen, K., Li, W., Xu, J., & Xu, L. (2023). Tracing the Si Dangling Bond Nanopathway Evolution ina-SiN_x:H Resistive Switching Memory by the Transient Current. Nanomaterials, 13(1), 85. https://doi.org/10.3390/nano13010085