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Journal: Nanomaterials, 2023
Volume: 13
Number: 2275

Article: A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication
Authors: by Luyu Wang, Penghao Zhang, Kaiyue Zhu, Qiang Wang, Maolin Pan, Xin Sun, Ziqiang Huang, Kun Chen, Yannan Yang, Xinling Xie, Hai Huang, Xin Hu, Saisheng Xu, Chunlei Wu, Chen Wang, Min Xu and David Wei Zhang
Link: https://www.mdpi.com/2079-4991/13/16/2275

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