Atomically Thin Amorphous Indium–Oxide Semiconductor Film Developed Using a Solution Process for High-Performance Oxide Transistors
Abstract
:1. Introduction
2. Materials and Methods
2.1. Preparation of Oxide Precursor Solutions
2.2. Fabrication of TFTs
2.3. Analysis of Thin Films and Devices
3. Results and Discussion
4. Conclusions
Supplementary Materials
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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Park, J.-H.; Park, W.; Na, J.-H.; Lee, J.; Eun, J.-S.; Feng, J.; Kim, D.-K.; Bae, J.-H. Atomically Thin Amorphous Indium–Oxide Semiconductor Film Developed Using a Solution Process for High-Performance Oxide Transistors. Nanomaterials 2023, 13, 2568. https://doi.org/10.3390/nano13182568
Park J-H, Park W, Na J-H, Lee J, Eun J-S, Feng J, Kim D-K, Bae J-H. Atomically Thin Amorphous Indium–Oxide Semiconductor Film Developed Using a Solution Process for High-Performance Oxide Transistors. Nanomaterials. 2023; 13(18):2568. https://doi.org/10.3390/nano13182568
Chicago/Turabian StylePark, Jun-Hyeong, Won Park, Jeong-Hyeon Na, Jinuk Lee, Jun-Su Eun, Junhao Feng, Do-Kyung Kim, and Jin-Hyuk Bae. 2023. "Atomically Thin Amorphous Indium–Oxide Semiconductor Film Developed Using a Solution Process for High-Performance Oxide Transistors" Nanomaterials 13, no. 18: 2568. https://doi.org/10.3390/nano13182568