Influences of Cu Doping on the Microstructure, Optical and Resistance Switching Properties of Zinc OxideThin Films

Weng, Jun-Hong; Kao, Ming-Cheng; Chen, Kai-Huang; Li, Men-Zhe

doi:10.3390/nano13192685

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Influences of Cu Doping on the Microstructure, Optical and Resistance Switching Properties of Zinc OxideThin Films

¹

Department of Electrical Engineering, Tunghai University, Taichung 40704, Taiwan

²

Department of Information and Communication Engineering, Chaoyang University of Technology, Taichung 413310, Taiwan

³

Department of Electronic Engineering, Center for Environmental Toxin and Emerging-Contaminant Research, Super Micro Mass Research & Technology Center, Cheng Shiu University, Chengcing Rd., Niaosong District, Kaohsiung 83347, Taiwan

⁴

Department of Electronic Engineering, Hsiuping University of Science and Technology, Taichung 41280, Taiwan

^*

Author to whom correspondence should be addressed.

Nanomaterials 2023, 13(19), 2685; https://doi.org/10.3390/nano13192685

Submission received: 9 August 2023 / Revised: 28 September 2023 / Accepted: 28 September 2023 / Published: 30 September 2023

(This article belongs to the Special Issue Nano-Structured Thin Films: Growth, Characteristics, and Application)

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Abstract

Copper-doped zinc oxide films (Zn_1−xCu_xO) (x = 0, 2%, 4%, 6%) were fabricated on conductive substrates using the sol-gel process. The crystal structure, optical and resistive switching properties of Zn_1−xCu_xO films are studied and discussed. RRAM is made using Zn_1−xCu_xO as the resistive layer. The results show that the (002) peak intensity and grain size of Zn_1−xCu_xOfilms increase from 0 to 6%. In addition, PL spectroscopy shows that the oxygen vacancy defect density of Zn_1−xCu_xO films also increases with the increase in Cu. The improved resistive switching performance of the RRAM device can be attributed to the formation of conductive filaments and the destruction of more oxygen vacancies in the Zn_1−xCu_xO film. Consequently, the RRAM device exhibits a higher low resistance state to high resistance state ratio and an HRS state of higher resistance value.

Keywords: ZnO; sol-gel; thin films; resistive switching

Correction Statement

This article has been republished with a minor correction to remove a duplicated Figure 5. This change does not affect the scientific content of the article.

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MDPI and ACS Style

Weng, J.-H.; Kao, M.-C.; Chen, K.-H.; Li, M.-Z. Influences of Cu Doping on the Microstructure, Optical and Resistance Switching Properties of Zinc OxideThin Films. Nanomaterials 2023, 13, 2685. https://doi.org/10.3390/nano13192685

AMA Style

Weng J-H, Kao M-C, Chen K-H, Li M-Z. Influences of Cu Doping on the Microstructure, Optical and Resistance Switching Properties of Zinc OxideThin Films. Nanomaterials. 2023; 13(19):2685. https://doi.org/10.3390/nano13192685

Chicago/Turabian Style

Weng, Jun-Hong, Ming-Cheng Kao, Kai-Huang Chen, and Men-Zhe Li. 2023. "Influences of Cu Doping on the Microstructure, Optical and Resistance Switching Properties of Zinc OxideThin Films" Nanomaterials 13, no. 19: 2685. https://doi.org/10.3390/nano13192685

APA Style

Weng, J.-H., Kao, M.-C., Chen, K.-H., & Li, M.-Z. (2023). Influences of Cu Doping on the Microstructure, Optical and Resistance Switching Properties of Zinc OxideThin Films. Nanomaterials, 13(19), 2685. https://doi.org/10.3390/nano13192685

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Influences of Cu Doping on the Microstructure, Optical and Resistance Switching Properties of Zinc OxideThin Films

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