Temperature-Enhanced Exciton Emission from GaAs Cone–Shell Quantum Dots
Abstract
:1. Introduction
2. Experimental Setup
3. Experimental Results
3.1. Power Dependence at Low Temperature
3.2. Temperature and Power Dependence
4. Model
4.1. QD Peak Intensities
4.2. Exciton Generation
4.3. Exciton Annihilation
5. Model Results
5.1. Power Dependence at Low T
5.2. Temperature and Power Dependence
6. Discussion and Conclusions
Author Contributions
Funding
Data Availability Statement
Acknowledgments
Conflicts of Interest
References
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Heyn, C.; Ranasinghe, L.; Deneke, K.; Alshaikh, A.; Blick, R.H. Temperature-Enhanced Exciton Emission from GaAs Cone–Shell Quantum Dots. Nanomaterials 2023, 13, 3121. https://doi.org/10.3390/nano13243121
Heyn C, Ranasinghe L, Deneke K, Alshaikh A, Blick RH. Temperature-Enhanced Exciton Emission from GaAs Cone–Shell Quantum Dots. Nanomaterials. 2023; 13(24):3121. https://doi.org/10.3390/nano13243121
Chicago/Turabian StyleHeyn, Christian, Leonardo Ranasinghe, Kristian Deneke, Ahmed Alshaikh, and Robert H. Blick. 2023. "Temperature-Enhanced Exciton Emission from GaAs Cone–Shell Quantum Dots" Nanomaterials 13, no. 24: 3121. https://doi.org/10.3390/nano13243121