Physical Properties of an Efficient MAPbBr3/GaAs Hybrid Heterostructure for Visible/Near-Infrared Detectors
Abstract
:1. Introduction
2. Experimental Details
2.1. Preparation of MAPbBr3/GaAs Heterojunction
2.2. Characterization
3. Results and Discussion
3.1. Homogeneity of MAPbBr3 Films on GaAs
3.2. Structural and Photo-Stability
3.3. Photoelectrical Measurements
4. Conclusions
Supplementary Materials
Author Contributions
Funding
Data Availability Statement
Acknowledgments
Conflicts of Interest
References
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Stoichiometry (MABr:PbBr2) | Soaking Time and Procedure | Sample Symbol and Role | |
---|---|---|---|
MAPbBr3/GaAs | (1:1) | 10 s (single shot) | S *, control |
MAPbBr3/glass | (1:1) | 10 s (single shot) | S g |
MAPbBr3/glass | (3:1) | 10 s (single shot) | S0, control |
MAPbBr3/glass | (3:1) | 15 s + (4 × 5 s) = 35 s (multiple shots) | S0 *, control |
MAPbBr3/GaAs | (3:1) | 10 s (single shot) | S1 |
MAPbBr3/GaAs | (3:1) | 5 s + 5 s = 10 s (multiple shots) | S2 |
MAPbBr3/GaAs | (3:1) | 10 s + 5 s = 15 s (multiple shots) | S3 |
MAPbBr3/GaAs | (3:1) | 15 s + (4 × 5 s) = 35 s (multiple shots) | S4 (Optimized) |
Materials and Structures | Responsivity (mA/W) | Conditions: Voltage/Light Excitation | Preparation Method | Reference |
---|---|---|---|---|
In-Ga/GaAs/MAPbBr3/Au | 3 16 | @ −1 V, 500 nm @ 50 V, 500 nm | Spin coating | This work |
Au/MAPbBr3 SC/Au Plane MSM-photodetector | 1.7 | @5 V, 532 nm | Unchanged temperature | [18] |
Pt/MAPb(BrxI1−x)3 SC/Pt | 2.41 | @ 10 V, white light | Inverse temperature crystallization (ITC) | [2] |
Au/MAPbI3 nanosheets/SiO2/Au | 0.5 | @ 1 V, 635 nm | Chemical vapor deposition | [14] |
Cs3Cu2I5/β-Ga2O3 | 2.3 3 | @ 0 V, @ −3 V, 265 nm | Dual-source vapor co-deposition | [19] |
MAPbBr3/Si/In | 0.394 | @ −1 V, 532 nm | Spin coating | [14] |
Si/Ga2O3/MAPbI3 | 1.6 | @ 1 V, 780 nm | PLD + Spin coating | [21] |
MAPbI3/GaN | 110 × 10−6 | @ 0 V, 405 nm | Two-step spin coating | [20] |
β-Ga2O3/Au/MAPbBr3 | 1.63 1.40 | @ 0 V, 240 nm @ 0 V 520 nm | MBE + spin coating | [6] |
SnO2 MWs/CsPbBr3 | 347 × 10−3 | @ 3 V, 530 nm | Vapor transport, drop casting | [13] |
ITO-MAPbI3-TiO2-ITO | 0.49 × 10−6 | @ 3 V, white light | Spin coating | [9] |
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Hidouri, T.; Pavesi, M.; Vaccari, M.; Parisini, A.; Jarmouni, N.; Cristofolini, L.; Fornari, R. Physical Properties of an Efficient MAPbBr3/GaAs Hybrid Heterostructure for Visible/Near-Infrared Detectors. Nanomaterials 2024, 14, 1472. https://doi.org/10.3390/nano14181472
Hidouri T, Pavesi M, Vaccari M, Parisini A, Jarmouni N, Cristofolini L, Fornari R. Physical Properties of an Efficient MAPbBr3/GaAs Hybrid Heterostructure for Visible/Near-Infrared Detectors. Nanomaterials. 2024; 14(18):1472. https://doi.org/10.3390/nano14181472
Chicago/Turabian StyleHidouri, Tarek, Maura Pavesi, Marco Vaccari, Antonella Parisini, Nabila Jarmouni, Luigi Cristofolini, and Roberto Fornari. 2024. "Physical Properties of an Efficient MAPbBr3/GaAs Hybrid Heterostructure for Visible/Near-Infrared Detectors" Nanomaterials 14, no. 18: 1472. https://doi.org/10.3390/nano14181472