Effect of Bias Voltage on the Microstructure and Photoelectric Properties of W-Doped ZnO Films

Mei, Haijuan; Wang, Wanli; Zhao, Junfeng; Zhong, Weilong; Qiu, Muyi; Xu, Jiayang; Gao, Kailin; Liu, Ge; Liang, Jianchu; Gong, Weiping

doi:10.3390/nano14242050

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Effect of Bias Voltage on the Microstructure and Photoelectric Properties of W-Doped ZnO Films

by

Haijuan Mei

^1,*,

Wanli Wang

²,

Junfeng Zhao

^1,*,

Weilong Zhong

¹,

Muyi Qiu

¹,

Jiayang Xu

¹,

Kailin Gao

¹,

Ge Liu

¹,

Jianchu Liang

¹ and

Weiping Gong

^1,*

¹

Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516007, China

²

School of Civil Engineering and Architecture, Nanchang Jiaotong University, Nanchang 330100, China

^*

Authors to whom correspondence should be addressed.

Nanomaterials 2024, 14(24), 2050; https://doi.org/10.3390/nano14242050 (registering DOI)

Submission received: 3 December 2024 / Revised: 15 December 2024 / Accepted: 20 December 2024 / Published: 21 December 2024

(This article belongs to the Special Issue Design and Applications of Heterogeneous Nanostructured Materials)

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Abstract

W-doped ZnO (WZO) films were deposited on glass substrates by using RF magnetron sputtering at different substrate bias voltages, and the relationships between microstructure and optical and electrical properties were investigated. The results revealed that the deposition rate of WZO films first decreased from 8.8 to 7.1 nm/min, and then increased to 11.5 nm/min with the increase in bias voltage. After applying a bias voltage to the substrate, the bombardment effect of sputtered ions was enhanced, and the films transformed from a smooth surface into a compact and rough surface. All the films exhibited a hexagonal wurtzite structure with a strong (002) preferred orientation and grew along the c-axis direction. When the bias voltage increased, both the residual stress and lattice parameter of the films gradually increased, and the maximum grain size of 43.4 nm was achieved at −100 V. When the bias voltage was below −300 V, all the films exhibited a high average transmittance of ~90% in the visible light region. As the bias voltage increased, the sheet resistance and resistivity of the films initially decreased and then gradually increased. The highest F_OM of 5.8 × 10⁻⁴ Ω⁻¹ was achieved at −100 V, possessing the best comprehensive photoelectric properties.

Keywords: WZO; bias voltage; microstructure; photoelectric properties

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MDPI and ACS Style

Mei, H.; Wang, W.; Zhao, J.; Zhong, W.; Qiu, M.; Xu, J.; Gao, K.; Liu, G.; Liang, J.; Gong, W. Effect of Bias Voltage on the Microstructure and Photoelectric Properties of W-Doped ZnO Films. Nanomaterials 2024, 14, 2050. https://doi.org/10.3390/nano14242050

AMA Style

Mei H, Wang W, Zhao J, Zhong W, Qiu M, Xu J, Gao K, Liu G, Liang J, Gong W. Effect of Bias Voltage on the Microstructure and Photoelectric Properties of W-Doped ZnO Films. Nanomaterials. 2024; 14(24):2050. https://doi.org/10.3390/nano14242050

Chicago/Turabian Style

Mei, Haijuan, Wanli Wang, Junfeng Zhao, Weilong Zhong, Muyi Qiu, Jiayang Xu, Kailin Gao, Ge Liu, Jianchu Liang, and Weiping Gong. 2024. "Effect of Bias Voltage on the Microstructure and Photoelectric Properties of W-Doped ZnO Films" Nanomaterials 14, no. 24: 2050. https://doi.org/10.3390/nano14242050

APA Style

Mei, H., Wang, W., Zhao, J., Zhong, W., Qiu, M., Xu, J., Gao, K., Liu, G., Liang, J., & Gong, W. (2024). Effect of Bias Voltage on the Microstructure and Photoelectric Properties of W-Doped ZnO Films. Nanomaterials, 14(24), 2050. https://doi.org/10.3390/nano14242050

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Effect of Bias Voltage on the Microstructure and Photoelectric Properties of W-Doped ZnO Films

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