Exploring the Implementation of GaAsBi Alloys as Strain-Reducing Layers in InAs/GaAs Quantum Dots
Abstract
:1. Introduction
2. Materials and Methods
3. Results and Discussion
4. Conclusions
Author Contributions
Funding
Data Availability Statement
Acknowledgments
Conflicts of Interest
References
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Sample | Bi Flux (nA) | Growth Temperature (°C) |
---|---|---|
Ref-HT | 0 | 510 |
Ref-LT | 0 | 370 |
Bi-L | 0.62 | |
Bi-M | 1.22 | |
Bi-H | 2.48 |
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Braza, V.; Fernández, D.; Ben, T.; Flores, S.; Bailey, N.J.; Carr, M.; Richards, R.; Gonzalez, D. Exploring the Implementation of GaAsBi Alloys as Strain-Reducing Layers in InAs/GaAs Quantum Dots. Nanomaterials 2024, 14, 375. https://doi.org/10.3390/nano14040375
Braza V, Fernández D, Ben T, Flores S, Bailey NJ, Carr M, Richards R, Gonzalez D. Exploring the Implementation of GaAsBi Alloys as Strain-Reducing Layers in InAs/GaAs Quantum Dots. Nanomaterials. 2024; 14(4):375. https://doi.org/10.3390/nano14040375
Chicago/Turabian StyleBraza, Verónica, Daniel Fernández, Teresa Ben, Sara Flores, Nicholas James Bailey, Matthew Carr, Robert Richards, and David Gonzalez. 2024. "Exploring the Implementation of GaAsBi Alloys as Strain-Reducing Layers in InAs/GaAs Quantum Dots" Nanomaterials 14, no. 4: 375. https://doi.org/10.3390/nano14040375