Wang, P.; Li, C.; Deng, C.; Yang, Q.; Xu, S.; Tang, X.; Wang, Z.; Tao, W.; Tao, N.; Wang, Q.;
et al. Novel 4H-SiC Double-Trench MOSFETs with Integrated Schottky Barrier and MOS-Channel Diodes for Enhanced Breakdown Voltage and Switching Characteristics. Nanomaterials 2025, 15, 946.
https://doi.org/10.3390/nano15120946
AMA Style
Wang P, Li C, Deng C, Yang Q, Xu S, Tang X, Wang Z, Tao W, Tao N, Wang Q,
et al. Novel 4H-SiC Double-Trench MOSFETs with Integrated Schottky Barrier and MOS-Channel Diodes for Enhanced Breakdown Voltage and Switching Characteristics. Nanomaterials. 2025; 15(12):946.
https://doi.org/10.3390/nano15120946
Chicago/Turabian Style
Wang, Peiran, Chenglong Li, Chenkai Deng, Qinhan Yang, Shoucheng Xu, Xinyi Tang, Ziyang Wang, Wenchuan Tao, Nick Tao, Qing Wang,
and et al. 2025. "Novel 4H-SiC Double-Trench MOSFETs with Integrated Schottky Barrier and MOS-Channel Diodes for Enhanced Breakdown Voltage and Switching Characteristics" Nanomaterials 15, no. 12: 946.
https://doi.org/10.3390/nano15120946
APA Style
Wang, P., Li, C., Deng, C., Yang, Q., Xu, S., Tang, X., Wang, Z., Tao, W., Tao, N., Wang, Q., & Yu, H.
(2025). Novel 4H-SiC Double-Trench MOSFETs with Integrated Schottky Barrier and MOS-Channel Diodes for Enhanced Breakdown Voltage and Switching Characteristics. Nanomaterials, 15(12), 946.
https://doi.org/10.3390/nano15120946
