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Article

Suitability of Copper Nitride as a Wiring Ink Sintered by Low-Energy Intense Pulsed Light Irradiation

1
Research Institute for Chemical Process Technology, National Institute of Advanced Industrial Science and Technology (AIST), 4-2-1 Nigatake Miyagino-ku, Sendai, Miyagi 983-8551, Japan
2
Flexible Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
3
Nicca Chemical Co. Ltd., 23-1, 4-chome, Bunkyo, Fukui-city, Fukui 910-8670, Japan
*
Author to whom correspondence should be addressed.
Present affiliation: Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, C3-1 Furo-cho Chikusa-ku, Nagoya 464-8603, Japan.
Nanomaterials 2018, 8(8), 617; https://doi.org/10.3390/nano8080617
Submission received: 24 July 2018 / Revised: 13 August 2018 / Accepted: 13 August 2018 / Published: 14 August 2018

Abstract

Copper nitride particles have a low decomposition temperature, they absorb light, and are oxidation-resistant, making them potentially useful for the development of novel wiring inks for printing circuit boards by means of intense pulsed light (IPL) sintering at low-energy. Here, we compared the thermal decomposition and light absorption of copper materials, including copper nitride (Cu3N), copper(I) oxide (Cu2O), or copper(II) oxide (CuO). Among the copper compounds examined, copper nitride had the second highest light absorbency and lowest decomposition temperature; therefore, we concluded that copper nitride was the most suitable material for producing a wiring ink that is sintered by means of IPL irradiation. Wiring inks containing copper nitride were compared with those of wiring inks containing copper nitride, copper(I) oxide, or copper(II) oxide, and copper conversion rate and sheet resistance were also determined. Under low-energy irradiation (8.3 J cm−2), copper nitride was converted to copper at the highest rate among the copper materials, and provided a sheet resistance of 0.506 Ω sq−1, indicating that copper nitride is indeed a candidate material for development as a wiring ink for low-energy intense pulsed light sintering-based printed circuit board production processes.
Keywords: copper; copper nitride; photo sintering; ink; paste; printed electronics; post-processing copper; copper nitride; photo sintering; ink; paste; printed electronics; post-processing
Graphical Abstract

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MDPI and ACS Style

Nakamura, T.; Cheong, H.J.; Takamura, M.; Yoshida, M.; Uemura, S. Suitability of Copper Nitride as a Wiring Ink Sintered by Low-Energy Intense Pulsed Light Irradiation. Nanomaterials 2018, 8, 617. https://doi.org/10.3390/nano8080617

AMA Style

Nakamura T, Cheong HJ, Takamura M, Yoshida M, Uemura S. Suitability of Copper Nitride as a Wiring Ink Sintered by Low-Energy Intense Pulsed Light Irradiation. Nanomaterials. 2018; 8(8):617. https://doi.org/10.3390/nano8080617

Chicago/Turabian Style

Nakamura, Takashi, Hea Jeong Cheong, Masahiko Takamura, Manabu Yoshida, and Sei Uemura. 2018. "Suitability of Copper Nitride as a Wiring Ink Sintered by Low-Energy Intense Pulsed Light Irradiation" Nanomaterials 8, no. 8: 617. https://doi.org/10.3390/nano8080617

APA Style

Nakamura, T., Cheong, H. J., Takamura, M., Yoshida, M., & Uemura, S. (2018). Suitability of Copper Nitride as a Wiring Ink Sintered by Low-Energy Intense Pulsed Light Irradiation. Nanomaterials, 8(8), 617. https://doi.org/10.3390/nano8080617

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