Role of Structure and Composition on the Performances of P-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures
Abstract
:1. Introduction
2. Materials, Methods and Results
2.1. Experimental Details
Films Preparation
2.2. Structure Morphology, Composition and Electro-Optical Data and Analysis
2.3. Structure Data and Analysis
2.4. Electrical Data and Analysis
2.5. Optical Data and Analysis
3. Devices Results and Analysis
3.1. Devices Structure, Geometry, Fabrication and Characterization Conditions
3.2. Capacitance Measurements Data and Analysis
3.3. TFT Electrical Data and Analysis
4. Discussion of the Results
5. Conclusions
Author Contributions
Funding
Acknowledgments
Conflicts of Interest
References
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Method | Device Structure | Process Temp. (°C) | Opp (%) | Dielectric | μh,FE (cm2 V−1 s−1) | Ion/Ioff | Year | Ref. |
---|---|---|---|---|---|---|---|---|
RFMS | SBG | RT * | 11.5 | ATO | 1.2 | 103 | 2010 | [28] |
RFMS | SBG | 300 | 1 | SiNx | 0.24 | 102 | 2010 | [32] |
RFMS | SBG | 150 | n.r. | Paper | 1.3 | 102 | 2011 | [33] |
RFMS | SBG | 250 | n.r. | SiO2 | 1.8 | 103 | 2013 | [34] |
RFMS | SBG | 225 | 4.3 | HfO2 | 0.33 | 103 | 2014 | [35] |
RFMS | SBG | 230 | n.r. | SiO2 | 0.59 | 3 × 103 | 2014 | [36] |
RFMS | CTG | 200 | 9 | P(VDF-TrFE) | 3.3 | 3 × 102 | 2014 | [37] |
RFMS | SBG | 200 | 11.8 | SiO2 | 1.36 | 2 × 103 | 2014 | [38] |
RFMS | STG | 200 | 9 | P(VDF-TrFE) | 2.7 | 2 × 102 | 2014 | [39] |
RFMS | SBG | 200 | n.r. | SiO2 | 0.61 | 6.2 × 105 | 2015 | [40] |
RFMS | SBG | 250 | n.r. | SiO2 | 1.8 | 105 | 2015 | [41] |
RFMS | SBG | 200 | 7.5 | SiO2 | 4.13 | 6 × 102 | 2015 | [42] |
RFMS | SBG | 250 | - | SiO2 | 1.16 | 2.3 × 102 | 2015 | [43] |
RFMS | SBG | 300 | n.r. | SiO2 | 3.33 | 104 | 2016 | [44] |
RFMS | SBG | 200 | n.r. | SiO2 | 0.63 | 5.2 × 106 | 2017 | [45] |
RFMS | SBG | 225 | n.r. | Al2O3 | 0.7 | 2.6 × 104 | 2018 | [46] |
RFMS | SBG | 120 | 9 | HfO2 | 5.53 | 2.7 × 103 | 2018 | [47] |
RFMS | SBG | 225 | 3.1 | SiO2 | 1.41 | 1.5 × 103 | 2018 | [48] |
RFMS | SBG | 225 | 3.1 | SiO2 | 0.87 | 1.88 × 104 | 2019 | [49] |
RFMS | SBG | RT * | 3.0 | ATO | 4.6 | 7 × 104 | 2019 | This work |
Method | Device Structure | Process Temp. (°C) | Oxygen Partial Pressure (%) | Dielectric | μh,FE (cm2 V−1 s−1) | Ion/Ioff | Year | Ref. |
---|---|---|---|---|---|---|---|---|
PLD | STG | 575 | 4 × 10−2 Pa | Al2O3 | 1.3 | 102 | 2008 | [50] |
PLD | STG | 250 | 1 × 10−2 Pa | SiO2 | 0.81 | ~102 | 2011 | [51] |
PLD | SBG | 300 | 1 × 10−2 Pa | SiO2 | 2.18 | -- | 2014 | [52] |
EBE | SBG | 400 | n.r. | SiO2 | 0.32 | 5 × 102 | 2013 | [53] |
TE | SBG | 250 | n.r. | Al2O3 | 1.4 | 5 × 104 | 2018 | [54] |
DCMS | SBG | 180 | 9 | HfO2 | 6.75 | ~103 | 2013 | [29] |
DCMS | DG | 300 | 3.07 × 10−2 Pa | SiO2 | 6.54 | 105 | 2015 | [30] |
DCMS | SBG | 200 | n.r. | HfO2 | 5.56 | 4.8 × 104 | 2016 | [55] |
DCMS | SBG | 200 | n.r. | HfO2 | 7.6 | 3 × 104 | 2018 | [31] |
PVD | SBG | 200 | n.r. | HfO2 | 2.13 | 9.6 × 106 | 2017 | [56] |
ALD | SBG | 250 | n.r. | Al2O3 | 1 | 2 × 106 | 2017 | [57] |
SC | SBG | 450 | - | SiO2 | 0.13 | 85 | 2012 | [58] |
Sample | IS (mm/s) | QS (mm/s) | Γ (mm/s) | Sn Phase | I (%) |
---|---|---|---|---|---|
SnO2 bulk | 0.01 | 0.56 | 1.34 | - | 100 |
α-SnO bulk | 2.67 −0.03 | 1.34 0.58 | 0.98 0.77 | α-SnO SnO2 | 95 5 |
-Sn metal | 2.56 | - | 1.03 | - | 100 |
Film Opp = 3.0%, RT | 2.76 0.11 2.56 | 1.87 0.52 − | 1.04 0.84 1.3 | SnO SnO2 -Sn | 65 15 20 |
Film Opp = 3.0%, 200 °C, 30 min | 2.7 0.08 2.56 | 1.38 0.59 − | 0.79 0.7 1.35 | SnO SnO2 -Sn | 81 8 11 |
Film Opp = 3.6%, RT | 2.73 0.11 2.56 | 1.82 0.53 − | 1.02 0.81 1.3 | SnO SnO2 -Sn | 78 15 7 |
Film Opp = 3.6%, 200 °C, 30 min | 2.7 0.06 | 1.34 0.48 | 0.82 0.85 | SnO SnO2 | 88 12 |
Annealing Conditions | Oxygen Partial Pressure (%) | Field Effect Mobility (cm2 V−1 s−1) | Saturation Mobility (cm2 V−1 s−1) | Threshold Voltage (V) | On-Off Ratio | Dominant Composition Phase |
---|---|---|---|---|---|---|
200 °C, 30 min | 3.0 | 3.3 | 4.6 | −10 | 7 × 104 | α-SnO |
200 °C, 60 min | 3.0 | 2.2 | 2.6 | −7.2 | 9 × 104 | α-SnO |
200 °C, 30 min | 3.6 | 0.16 | 0.28 | −29 | 2 × 105 | α-SnO + β-SnO |
200 °C, 60 min | 3.6 | 0.02 | 0.03 | −38.6 | 3 × 104 | α-SnO + β-SnO |
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Barros, R.; Saji, K.J.; Waerenborgh, J.C.; Barquinha, P.; Pereira, L.; Carlos, E.; Martins, R.; Fortunato, E. Role of Structure and Composition on the Performances of P-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures. Nanomaterials 2019, 9, 320. https://doi.org/10.3390/nano9030320
Barros R, Saji KJ, Waerenborgh JC, Barquinha P, Pereira L, Carlos E, Martins R, Fortunato E. Role of Structure and Composition on the Performances of P-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures. Nanomaterials. 2019; 9(3):320. https://doi.org/10.3390/nano9030320
Chicago/Turabian StyleBarros, Raquel, Kachirayil J. Saji, João C. Waerenborgh, Pedro Barquinha, Luís Pereira, Emanuel Carlos, Rodrigo Martins, and Elvira Fortunato. 2019. "Role of Structure and Composition on the Performances of P-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures" Nanomaterials 9, no. 3: 320. https://doi.org/10.3390/nano9030320