Monte Carlo Simulation for Electron Dynamics in Semiconductor Devices
Osmangazi University, Physics Department, 26480, Eskişehir-TURKEY
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Math. Comput. Appl. 2005, 10(1), 19-26; https://doi.org/10.3390/mca10010019
Published: 1 April 2005
Abstract
The single-particle Monte Carlo simulation for the electron transport in semiconductor devices is presented. The Monte Carlo method is briefly compared with alternative theoretical techniques. Flowchart of the simulation program is given and selections of free flight time, scattering mechanism and electron wave vector are explained. Determination of mean electron velocity and energy is presented.
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MDPI and ACS Style
Akarsu, M.; Özbaş, Ö. Monte Carlo Simulation for Electron Dynamics in Semiconductor Devices. Math. Comput. Appl. 2005, 10, 19-26. https://doi.org/10.3390/mca10010019
AMA Style
Akarsu M, Özbaş Ö. Monte Carlo Simulation for Electron Dynamics in Semiconductor Devices. Mathematical and Computational Applications. 2005; 10(1):19-26. https://doi.org/10.3390/mca10010019
Chicago/Turabian StyleAkarsu, Mustafa, and Ömer Özbaş. 2005. "Monte Carlo Simulation for Electron Dynamics in Semiconductor Devices" Mathematical and Computational Applications 10, no. 1: 19-26. https://doi.org/10.3390/mca10010019
