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Article

Design and Simulation of a High-Responsivity Dielectric Metasurface Si-Based InGaAs Photodetector

International Joint Laboratory for Integrated Circuits Design and Application, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou 450001, China
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Photonics 2024, 11(10), 906; https://doi.org/10.3390/photonics11100906
Submission received: 15 August 2024 / Revised: 17 September 2024 / Accepted: 23 September 2024 / Published: 26 September 2024
(This article belongs to the Special Issue Group IV Photonics: Advances and Applications)

Abstract

A Si-based photodetector is the core device of Si-based optical interconnection; its material and performance are the key factors restricting its development. This paper conducts theoretical research on the issues of lattice mismatch between heterogeneous materials and low device responsivity in Si-based InGaAs photodetectors for the 1550 nm optical communication band. The material mismatch issue is addressed through the use of the high-aspect ratio trapping (ART) epitaxial technique, enabling the realization of high-performance Si-based III-V materials. By introducing a dielectric metasurface into the top layer of the structure, the light absorption efficiency is enhanced, realizing broadband optical absorption enhancement for Si-based photodetectors. This paper mainly focuses on designing the optimal parameters of the dielectric metasurface structure based on the finite-difference time-domain (FDTD) Solutions to achieve the performance analysis of a high-responsivity 1550 nm Si-based InGaAs photodetector. The results show that the quantum efficiency of the dielectric metasurface structure is theoretically estimated to be 88.8% and the response rate is 1.11 A/W, which is 2%~16% higher than that of the unetched structure in the whole band. The research results of this paper will provide new ideas for the development of novel, high-performance, and miniaturized Si-based photodetectors and lay a theoretical foundation for Si-based optical interconnection.
Keywords: Si-based optical interconnection; dielectric metasurface; Si-based InGaAs photodetector; high responsivity; ART epitaxial technology Si-based optical interconnection; dielectric metasurface; Si-based InGaAs photodetector; high responsivity; ART epitaxial technology

Share and Cite

MDPI and ACS Style

Dong, H.; Wu, Y.; Zheng, H.; Chen, P.; Deng, W.; Ma, L.; Dong, X.; Duan, Z.; Li, M. Design and Simulation of a High-Responsivity Dielectric Metasurface Si-Based InGaAs Photodetector. Photonics 2024, 11, 906. https://doi.org/10.3390/photonics11100906

AMA Style

Dong H, Wu Y, Zheng H, Chen P, Deng W, Ma L, Dong X, Duan Z, Li M. Design and Simulation of a High-Responsivity Dielectric Metasurface Si-Based InGaAs Photodetector. Photonics. 2024; 11(10):906. https://doi.org/10.3390/photonics11100906

Chicago/Turabian Style

Dong, Hengyang, Yujie Wu, Hongbo Zheng, Pandi Chen, Wenhao Deng, Liuhong Ma, Xinyuan Dong, Zhiyong Duan, and Mengke Li. 2024. "Design and Simulation of a High-Responsivity Dielectric Metasurface Si-Based InGaAs Photodetector" Photonics 11, no. 10: 906. https://doi.org/10.3390/photonics11100906

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