Next Article in Journal
The Correction of Keystone Distortion in Czerny–Turner Spectrometer Using Freeform Surface
Previous Article in Journal
Laser Scanning Method for Time-Resolved Measurements of Wavefront Distortion Introduced by Active Elements in High-Power Laser Amplifiers
Previous Article in Special Issue
Scintillation and Luminescent Properties of the (Gd,Y)3Al2Ga3O12:Ce Ceramics Obtained by Compaction of Green Bodies Using Digital Light Processing 3D Printing
 
 
Font Type:
Arial Georgia Verdana
Font Size:
Aa Aa Aa
Line Spacing:
Column Width:
Background:
This is an early access version, the complete PDF, HTML, and XML versions will be available soon.
Review

Modeling Electronic and Optical Properties of InAs/InP Quantum Dots

iPhotonics Laboratories, Department of Electrical and Computer Engineering, Concordia University, Montreal, QC H3G1M8, Canada
*
Author to whom correspondence should be addressed.
Photonics 2024, 11(8), 749; https://doi.org/10.3390/photonics11080749 (registering DOI)
Submission received: 27 June 2024 / Revised: 27 July 2024 / Accepted: 29 July 2024 / Published: 10 August 2024

Abstract

A theoretical investigation of electronic properties of self-assembled InAs/InP quantum dots (QDs) is presented, utilizing a novel two-step modeling approach derived from a double-capping procedure following QD growth processes, a method pioneered in this study. The electronic band structure of the QD is calculated by the newly established accurate two-step method, i.e., the improved strain-dependent, eight-band k p method. The impact of various QD structural parameters (e.g., height, diameter, material composition, sublayer, and inter-layer spacer) on electronic states’ distribution and transition energies is investigated. Analysis of carrier dynamics within QDs includes intraband and interband transitions. The calculation of the carrier transitions between two atomic states, providing insights into optical gain or loss within QDs, is in terms of dipole matrix element, momentum matrix element, and oscillation strength, etc. In addition, the time-domain, traveling-wave method (i.e., rate equations coupled with traveling-wave equations) is used to investigate the optical properties of QD-based lasers. Several optical properties of the QD-based lasers are investigated, such as polarization, gain bandwidth, two-state lasing, etc. Based on the aforementioned method, our key findings include the optimization of carrier non-radiative intraband relaxation through sublayer manipulation, wavelength control through emission blue-shifting and gain bandwidth via variation of sublayer, polarization control of QDs photoluminescence via excited states’ transitions, and the enhancement of two-state lasing in InAs/InP QD lasers by thin inter-layer spacers. This review offers comprehensive insights into QDs electronic band structures and carrier dynamics, providing valuable guidance for optimizing QD-based lasers and their potential designs.
Keywords: self-assembled InAs/InP quantum dots; theoretical modeling; momentum matrix element; oscillation strength; intraband and interband transitions; emission blue-shifting; gain bandwidth; polarization; two-state lasing self-assembled InAs/InP quantum dots; theoretical modeling; momentum matrix element; oscillation strength; intraband and interband transitions; emission blue-shifting; gain bandwidth; polarization; two-state lasing

Share and Cite

MDPI and ACS Style

Huang, F.; Chen, G.; Zhang, X. Modeling Electronic and Optical Properties of InAs/InP Quantum Dots. Photonics 2024, 11, 749. https://doi.org/10.3390/photonics11080749

AMA Style

Huang F, Chen G, Zhang X. Modeling Electronic and Optical Properties of InAs/InP Quantum Dots. Photonics. 2024; 11(8):749. https://doi.org/10.3390/photonics11080749

Chicago/Turabian Style

Huang, Fujuan, Gaowen Chen, and Xiupu Zhang. 2024. "Modeling Electronic and Optical Properties of InAs/InP Quantum Dots" Photonics 11, no. 8: 749. https://doi.org/10.3390/photonics11080749

Note that from the first issue of 2016, this journal uses article numbers instead of page numbers. See further details here.

Article Metrics

Back to TopTop