1. Introduction
There is an increasing demand for higher accuracy and resolution in target detection, particularly in fields such as military reconnaissance, aerospace, and autonomous driving [
1,
2]. Laser detection and ranging technology (LIDAR), which employs lasers as a medium, is progressively supplanting traditional ranging techniques due to its high resolution, accuracy, and strong anti-interference capabilities. In comparison to traditional pulse flight time (time of flight, TOF) ranging [
3,
4], frequency-modulated continuous wave (FMCW) technology represents a more advanced laser ranging technique, providing advantages such as high precision and long-range measurement [
5,
6]. The core principle involves continuously varying the frequency of the laser emission and measuring the frequency differences in the returned signal to determine the distance between the target object and the ranging device.
Existing FMCW laser-ranging systems typically employ linear modulation methods, such as triangular and sawtooth waves. Due to the nonlinear relationship between laser wavelength and injection current, where the current influences the temperature of the gain medium, leading to wavelength fluctuations [
7], the laser frequency does not generally vary linearly with the modulation signal [
8]. This instability in the directly measured beat frequency signal significantly impacts the accuracy and signal-to-noise ratio of the ranging measurements [
9,
10,
11]. Initially, Iiyama et al. employed active linear control technology by comparing the beat frequency signal from the auxiliary interferometer with a fixed-frequency external reference signal through a phase-locked amplifier, followed by correction [
12]. This approach proved to be costly and challenging. The more widely adopted nonlinear correction method is currently the equal optical frequency interval resampling technique, which involves using an auxiliary interferometer signal with a known optical path difference to sample the measurement interferometer signal at equal optical frequencies [
13,
14,
15], thereby correcting for source nonlinearity. In 2020, Badar et al. achieved a breakthrough by integrating the auxiliary and main interferometers, thereby enabling the correction of sweep nonlinearity using only a single signal channel [
16]. In 2021, Zhang and colleagues from China Ji-Liang University utilized the Hilbert transform to expand the phase of the auxiliary interferometer beat frequency signal. Their results demonstrated that with a 10-fold phase expansion, the maximum error at 1.6 m was 19 μm [
17].
Although nonlinear correction techniques, such as equal optical frequency interval resampling, can compensate for modulation signal nonlinearity and improve the measurement accuracy of linear FMCW laser ranging systems, these methods are inherently complex, requiring additional reference paths and longer delay fibers. Additionally, due to the substantial nonlinearity in the time-frequency characteristics of the modulation signal, traditional nonlinear correction techniques typically focus on analyzing time-domain signals. These techniques extract beat frequency information through Fourier transformation of resampled signals to calculate distances. During this process, the modulation signal remains analytically unknown. In contrast, our study proposes obtaining analytically known frequency information of the modulation signal through IQ demodulation. We then use interpolation fitting to obtain equidistant ranging interference signals and perform Fourier transformation on these frequency domain signals to derive corresponding distance information, thereby achieving nonlinear FMCW laser ranging. Experimental comparisons demonstrate that this method outperforms traditional Hilbert transform techniques in terms of ranging accuracy and error. Furthermore, this study employs an on-chip interferometer based on SiON waveguides to acquire IQ signals, achieving system miniaturization and integration. Photonic integrated chips are compact systems that incorporate various photonic devices onto a microchip. Due to the numerous advantages of photonic devices, such as compact size, improved stability, and low power consumption, photonic integrated chips are widely used in cutting-edge fields, including optical communication, optical sensing, photonic computing, and smart lighting. Experiments conducted at a distance of 3.97 m yielded an absolute distance error of 0.012 m, a ranging accuracy of 0.89%, and a distance resolution of 2 cm. This method is not constrained by the length of the delay fiber in auxiliary optical paths and effectively mitigates the effects of the fence and peak-valley fitting errors, thereby significantly enhancing measurement accuracy. This approach not only addresses the impact of frequency nonlinearity but also incorporates the advantages of sinusoidal modulation, including simplicity, low cost, and uniqueness. These features significantly expand the potential applications of FMCW measurement techniques.
2. Principle
The frequency of the laser output, modulated by a sinusoidal signal, changes over time, as expressed by:
Here,
represents the initial frequency,
denotes the frequency modulation bandwidth,
indicates the frequency of the modulating sinusoidal signal,
denotes time, and
signifies the initial phase of the sinusoidal change. Subsequently, the expression for the laser phase change over time can be derived from the expression for the time-dependent laser frequency variation:
From this formula, the expression of the original laser signal can be obtained as follows:
Here,
denotes the amplitude of the original laser signal and
represents the initial phase of the original laser signal. The frequency-modulated laser signal, after reflecting off the target object and inducing a delay time
, is described by the following echo expression:
The measured signal and the local oscillator signal coherently produce a beat frequency signal at the photodetector, with the expression for the output photocurrent of the coherent signal given by:
Here,
represents the laser heterodyne interference efficiency, with
and
corresponding to the phases of the local oscillator signal and the echo signal, respectively. This formula includes the DC component of the interference signal, the harmonic frequency term, the sum frequency term, and the difference frequency term. Since the DC component of the signal does not contain distance information about the measured target, it can be filtered out. The optical frequencies of the harmonic frequency term and the sum frequency term, typically on the order of hundreds of THz, far exceed the frequency response range of the photodetector and can, therefore, be disregarded. When the difference frequency term falls below the cutoff frequency of the photodetector, it results in the generation of a photocurrent signal. Consequently, the interference signal received by the detector, after filtering out the DC component, is expressed as follows:
As shown in
Figure 1a,b, a frequency-monotonic interval (f1, f2) is selected from the original frequency-modulated signal, along with the ranging interference signal corresponding to the time interval (t1, t2) is selected. After dividing the frequency interval (f1, f2) equally, the piecewise cubic hermite interpolating polynomial (PCHIP) interpolation method is used to insert discrete points on the coordinate axis of this evenly spaced frequency interval. These discrete points represent data extracted from
Figure 1a,b, where the frequency is plotted on the
x-axis and the corresponding interference signal intensity on the
y-axis. After fitting with equally spaced frequencies, as depicted in
Figure 1c, the interference signal becomes independent of time, and its frequency variation is uniform. Using this method, we successfully obtain interference signals with equal optical frequency intervals, from which distance information can be derived by performing a fast Fourier Transform (FFT).
The experimental test system, depicted in
Figure 2, features an all-fiber structure. The light source employs a standard commercial distributed feedback (DFB) laser with a central wavelength of 1310 nm and a linewidth of 200 kHz. The laser is driven by the CTL200 butterfly laser driver from Koheron, and a function generator produces a sinusoidal signal with a modulation period of 1kHz and modulation amplitude of 0.65 Vpp. After passing through a coupler, a portion of the light source signal enters an IQ demodulation chip. This chip includes a 7 m delay line Mach–Zehnder (MZ) interferometer, which extracts the frequency information of the sinusoidal frequency-modulated signal through IQ demodulation for further data processing.
The remaining portion of the signal passes through a 1:9 coupler and functions as both the local oscillator and the main beam of the test system. The ranging main beam, after passing through a polarization-maintaining circulator, is emitted into the object space by a lens. The target object, a diffuse reflection board with 75% reflectivity, has a surface that is characterized as a uniform Lambertian surface. The main beam, reflected by the object, returns along its path to the circulator and merges with the local oscillator light at the balanced photodetector. The differential amplification circuit within the balanced photodetector effectively suppresses the common-mode signal and amplifies the differential-mode signal. Consequently, balanced detection effectively suppresses the DC component of the beat frequency signal and enhances the interference signal. The photodetector (PD) module, as shown in the figure, consists of three single-ended photodetectors and one balanced photodetector. All optical signals received by the PD are converted into digital signals by a digital acquisition card and subsequently processed and analyzed by a computer.
As shown in
Figure 3, the IQ demodulation chip utilizes an asymmetric MZ interferometer structure. The input light is divided into two paths by a coupler, with one path passing through a 7-m-long waveguide structure to introduce a delay. The total loss for this 7-m waveguide is 14 dB. The 7-m-long waveguide is arranged in a spiral configuration, occupying an area of approximately 1 square centimeter. After the delay, the two paths are combined using a 2 × 4 mixer structure. The four output ports exhibit mixing phases of 0°, 90°, 180°, and 270°, respectively, with the 0° and 90° ports selected as the IQ signal outputs. The chip is packaged with an optical fiber array to facilitate signal input and output.
The chip utilizes SiON as the core material, which exhibits lower transmission loss (<0.4 dB/m) compared to other dielectrics, thereby making it more suitable for sensor applications than alternative optical integration platforms. Sensors designed for coherent detection typically incorporate long waveguide delay lines. The low loss of SiON allows the design to forgo optical amplification units, thereby simplifying the design and enhancing reliability. We employed RSoft CAD v2018.12 software to compute the effective refractive index and field distribution of the SiON waveguide modes. As shown in
Figure 4, the effective refractive index at a wavelength of 1310 nm, given the illustrated structural parameters and TE polarization, is approximately 1.47.
Figure 5 illustrates the simulation results for the coupler structure in the on-chip interferometer, achieving a 5:5 splitting ratio through the use of cascaded couplers. The multi-stage couplers provide greater flexibility, enabling various splitting ratios by adjusting the coupling efficiency and length of each stage. This design effectively mitigates the impact of optical path cross-coupling and enhances system stability. Additionally, the cascaded directional couplers are linked through non-coupled sections that introduce phase shifts. This design eliminates errors introduced by the front-end coupler, facilitating the development of polarization- and fabrication-insensitive splitting devices [
18].
In practical applications, optical waveguides are often configured in curved arrangements. When an optical waveguide bends, it disrupts the original spatial refractive index distribution, leading to partial leakage of optical energy and resulting in losses. SiON has a refractive index ranging from 1.5 to 2. Its tunable refractive index not only supports the design of multi-layer structures but also provides a greater refractive index contrast compared to silica cladding (with a refractive index of 1.45). This characteristic not only mitigates high waveguide losses and scattering observed in platforms such as SOI (silicon-on-insulator) but also permits smaller waveguide bending radii, thereby ensuring appropriate integration density.
Table 1 lists the loss and bending radii of different materials. We simulated light field propagation in an S-shaped waveguide with varying refractive index differences, as illustrated in
Figure 6. When the refractive index difference is 0.01, a significant portion of light leaks out, whereas, with a refractive index difference of 0.05, the light field is effectively confined within the waveguide.
The chip fabrication process is illustrated in the
Figure 7. Initially, a silicon wafer is placed in an oxidation furnace for wet oxidation, resulting in the formation of dense SiO
2 films on both sides of the wafer. Subsequently, a pure silica layer is deposited on the front side of the silicon wafer using plasma-enhanced chemical vapor deposition (PECVD) to serve as the lower cladding layer for the waveguide. A specially doped silica layer, SiON, is then deposited on the front side using PECVD to act as the core layer for the waveguide. The doping process is designed to ensure that the refractive index of the core layer exceeds that of the cladding layer. Photoresist is then spin-coated and patterned using photolithography and development processes to transfer the designed pattern from the mask to the photoresist. The photoresist is subsequently employed as a mask material for etching with a plasma etching machine, thereby transferring the pattern from the photoresist to the core layer. After the etching process, the remaining photoresist is removed, and a pure silica layer is deposited to form the upper cladding layer. Finally, the chip undergoes annealing to eliminate voids that formed during the deposition of the upper cladding layer. The final steps involve cutting, grinding, and polishing to produce individual chips.