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Article

High-Peak-Power Sub-Nanosecond Laser Pulse Sources Based on Hetero-Integrated “Heterothyristor–Laser Diode” Vertical Stack

1
Ioffe Institute Russian Academy of Sciences,194021 St. Petersburg, Russia
2
Polyus Research Institute, Open Joint-Stock Company M.F. Stel’makh,117342 Moscow, Russia
3
Department of Nanotechnology and Microsystem Engineering, RUDN University, 117198 Moscow, Russia
*
Author to whom correspondence should be addressed.
Photonics 2025, 12(2), 130; https://doi.org/10.3390/photonics12020130
Submission received: 20 December 2024 / Revised: 21 January 2025 / Accepted: 30 January 2025 / Published: 1 February 2025
(This article belongs to the Section Lasers, Light Sources and Sensors)

Abstract

Compact high-power sub-nanosecond laser pulse sources with a wavelength of 940 nm are developed and studied. A design for laser pulse sources based on a vertical stack is proposed, which includes a semiconductor laser chip and a current switch chip. To create a compact high-speed current switch, a three-electrode heterothyristor is developed. It is found that the use of heterothyristor-based current switches allows the creation of a low-loss pump current circuit, generating short current pulses and operating the semiconductor laser in gain-switching mode. For the semiconductor laser chip, an asymmetric semiconductor heterostructure with a quantum-well active region is designed. The design of the emitting aperture of the laser chip is optimized to improve the operating characteristics of the laser beam when generating sub-ns optical pulses. It is shown that the transition to a monolithic emitting aperture design reduces the laser pulse turn-on spatial inhomogeneity, which is 90 ps over the entire range of optical powers studied. It is also demonstrated that by increasing the emitting aperture width to 400 μm, laser pulses with a peak power of 39.5 W and a pulse width at full width at half maximum (FWHM) of 120 ps can be generated.
Keywords: hetero-integrated stack; semiconductor lasers; thyristor switches; laser heterostructure hetero-integrated stack; semiconductor lasers; thyristor switches; laser heterostructure

Share and Cite

MDPI and ACS Style

Slipchenko, S.; Podoskin, A.; Shushkanov, I.; Rizaev, A.; Kondratov, M.; Shamakhov, V.; Kapitonov, V.; Bakhvalov, K.; Grishin, A.; Bagaev, T.; et al. High-Peak-Power Sub-Nanosecond Laser Pulse Sources Based on Hetero-Integrated “Heterothyristor–Laser Diode” Vertical Stack. Photonics 2025, 12, 130. https://doi.org/10.3390/photonics12020130

AMA Style

Slipchenko S, Podoskin A, Shushkanov I, Rizaev A, Kondratov M, Shamakhov V, Kapitonov V, Bakhvalov K, Grishin A, Bagaev T, et al. High-Peak-Power Sub-Nanosecond Laser Pulse Sources Based on Hetero-Integrated “Heterothyristor–Laser Diode” Vertical Stack. Photonics. 2025; 12(2):130. https://doi.org/10.3390/photonics12020130

Chicago/Turabian Style

Slipchenko, Sergey, Aleksander Podoskin, Ilia Shushkanov, Artem Rizaev, Matvey Kondratov, Viktor Shamakhov, Vladimir Kapitonov, Kirill Bakhvalov, Artem Grishin, Timur Bagaev, and et al. 2025. "High-Peak-Power Sub-Nanosecond Laser Pulse Sources Based on Hetero-Integrated “Heterothyristor–Laser Diode” Vertical Stack" Photonics 12, no. 2: 130. https://doi.org/10.3390/photonics12020130

APA Style

Slipchenko, S., Podoskin, A., Shushkanov, I., Rizaev, A., Kondratov, M., Shamakhov, V., Kapitonov, V., Bakhvalov, K., Grishin, A., Bagaev, T., Ladugin, M., Marmalyuk, A., Simakov, V., & Pikhtin, N. (2025). High-Peak-Power Sub-Nanosecond Laser Pulse Sources Based on Hetero-Integrated “Heterothyristor–Laser Diode” Vertical Stack. Photonics, 12(2), 130. https://doi.org/10.3390/photonics12020130

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