Tilemachou, A.; Zervos, M.; Othonos, A.; Pavloudis, T.; Kioseoglou, J.
p-Type Iodine-Doping of Cu3N and Its Conversion to γ-CuI for the Fabrication of γ-CuI/Cu3N p-n Heterojunctions. Electron. Mater. 2022, 3, 15-26.
https://doi.org/10.3390/electronicmat3010002
AMA Style
Tilemachou A, Zervos M, Othonos A, Pavloudis T, Kioseoglou J.
p-Type Iodine-Doping of Cu3N and Its Conversion to γ-CuI for the Fabrication of γ-CuI/Cu3N p-n Heterojunctions. Electronic Materials. 2022; 3(1):15-26.
https://doi.org/10.3390/electronicmat3010002
Chicago/Turabian Style
Tilemachou, Argyris, Matthew Zervos, Andreas Othonos, Theodoros Pavloudis, and Joseph Kioseoglou.
2022. "p-Type Iodine-Doping of Cu3N and Its Conversion to γ-CuI for the Fabrication of γ-CuI/Cu3N p-n Heterojunctions" Electronic Materials 3, no. 1: 15-26.
https://doi.org/10.3390/electronicmat3010002
APA Style
Tilemachou, A., Zervos, M., Othonos, A., Pavloudis, T., & Kioseoglou, J.
(2022). p-Type Iodine-Doping of Cu3N and Its Conversion to γ-CuI for the Fabrication of γ-CuI/Cu3N p-n Heterojunctions. Electronic Materials, 3(1), 15-26.
https://doi.org/10.3390/electronicmat3010002