13 September 2022
Electronics | Highly Cited Papers in 2021 in the Section “Semiconductor Devices”
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Editor’s Choice articles are based on recommendations by the scientific editors of MDPI journals from around the world. Editors select a small number of articles recently published in the journal that they believe will be particularly interesting to readers, or important in the respective research area. The aim is to provide a snapshot of some of the most exciting work published in the various research areas of the journal.
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The “Semiconductor Devices” Section publishes original and significant contributions around the theory and performance of semiconductor devices and related materials, including devices, fabrication processes, simulations, quantum devices, hybrid devices, flexible electronic devices, novel semiconductors, semiconductor materials, and device physics. We publish reviews on these subjects and Special Issues that deal with specific topics.
As they are of open access format, you have free and unlimited access to the full text of all articles published in our journal. We welcome you to read our most highly cited papers published in 2021 listed below:
1. “In-Memory Computing with Resistive Memory Circuits: Status and Outlook”
by Giacomo Pedretti and Daniele Ielmini
Electronics 2021, 10(9), 1063; https://doi.org/10.3390/electronics10091063
Available online: https://www.mdpi.com/2079-9292/10/9/1063
2. “Study of Quantized Hardware Deep Neural Networks Based on Resistive Switching Devices, Conventional versus Convolutional Approaches”
by Rocío Romero-Zaliz et al.
Electronics 2021, 10(3), 346; https://doi.org/10.3390/electronics10030346
Available online: https://www.mdpi.com/2079-9292/10/3/346
3. “Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM) Based Ternary Combinational Logic Circuits”
by Furqan Zahoor et al.
Electronics 2021, 10(1), 79; https://doi.org/10.3390/electronics10010079
Available online: https://www.mdpi.com/2079-9292/10/1/79
4. “Measurements and Computations of Internal Temperatures of the IGBT and the Diode Situated in the Common Case”
by Paweł Górecki and Krzysztof Górecki
Electronics 2021, 10(2), 210; https://doi.org/10.3390/electronics10020210
Available online: https://www.mdpi.com/2079-9292/10/2/210
5. “Influence of Selected Factors on Thermal Parameters of the Components of Forced Cooling Systems of Electronic Devices”
by Krzysztof Posobkiewicz and Krzysztof Górecki
Electronics 2021, 10(3), 340; https://doi.org/10.3390/electronics10030340
Available online: https://www.mdpi.com/2079-9292/10/3/340
6. “Multi-Level Switching of Al-Doped HfO2 RRAM with a Single Voltage Amplitude Set Pulse”
by Jinfu Lin et al.
Electronics 2021, 10(6), 731; https://doi.org/10.3390/electronics10060731
Available online: https://www.mdpi.com/2079-9292/10/6/731
7. “Optimization of Multi-Level Operation in RRAM Arrays for In-Memory Computing”
by Eduardo Pérez et al.
Electronics 2021, 10(9), 1084; https://doi.org/10.3390/electronics10091084
Available online: https://www.mdpi.com/2079-9292/10/9/1084
8. “Recent Progress on 3D NAND Flash Technologies”
by Akira Goda
Electronics 2021, 10(24), 3156; https://doi.org/10.3390/electronics10243156
Available online: https://www.mdpi.com/2079-9292/10/24/3156
9. “A Compact Modular 5 GW Pulse PFN-Marx Generator for Driving HPM Source”
by Haoran Zhang et al.
Electronics 2021, 10(5), 545; https://doi.org/10.3390/electronics10050545
Available online: https://www.mdpi.com/2079-9292/10/5/545
10. “Analysis of Electrothermal Effects in Devices and Arrays in InGaP/GaAs HBT Technology”
by Vincenzo d’Alessandro et al.
Electronics 2021, 10(6), 757; https://doi.org/10.3390/electronics10060757
Available online: https://www.mdpi.com/2079-9292/10/6/757